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Optical and Quantum Electronics

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01-05-2014

A review of external cavity-coupled quantum dot lasers

Authors: S. G. Li, Q. Gong, C. F. Cao, X. Z. Wang, J. Y. Yan, Y. Wang, H. L. Wang

Published in: Optical and Quantum Electronics | Issue 5/2014

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Abstract

Since the external cavity quantum dot laser was first demonstrated, the performances have been improved in terms of operation temperature, output power, pulse generator and tuneability based on the naturally size fluctuation of quantum dot. Nowadays, the external cavity quantum dot sources have been successfully used in different absorption spectroscope techniques, in industry, biomedical and research. In this paper we reviewed the recent developments of quantum dot lasers operated in a grating-coupled external cavity system where a single frequency and wide tunable wavelength range were easily obtained by adjusting the grating angle. In all cases, we mainly stressed the significant progresses in understanding of basic optical and electronic properties to enable the importance steps forward. The prospects for further progress directed towards stability, mode-hoping-free tuning range, miniaturization and integration of the external cavity quantum dot lasers also reviewed.

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Akiyama, T., Hatori, N., Nakata, Y., Ebe, H., Sugawara, M.: Pattern-effect-free semiconductor optical amplifier achieved using quantum dots. IEEE Electron. Lett. 38, 1139–1140 (2002)CrossRef

Alghoraibi, I., Rohel, T., Piron, R., Bertru, N., Paranthoen, C., Elias, G., Nakkar, A., Folliot, H., Le Corre, A., Loualiche, S.: Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates. Appl. Phys. Lett. 91, 261105 (2007)ADSCrossRef

Allen, C.Nì., Ortner, G., Dion, C., Poole, P.J., Barrios, P., Lapointe, J., Pakulski, G., Render, W., Fafard, S., Raymond, S.: External-cavity quantum-dot laser tunable through \(1.55\;\mu \text{ m }\). Appl. Phys. Lett. 88, 113109 (2006)

Anantathanasarn, S., Nötzel, R., van Veldhoven, P.J., van Otten, F.W.M., Barbarin, Y., Servanton, G., de Vries, T., Smalbrugge, E., Geluk, E.J., Eijkemans, T.J., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., Wolter, J.H.: Lasing of wavelength-tunable (\(1.55 \ \mu \text{ m }\) regions) InAs/InGaAsP/InP(100) quantum dots grown by metal organic vapor-phase-epitaxy. Appl. Phys. Lett. 89, 073115 (2006)ADSCrossRef

Arakawa, Y., Sakaki, H.: Multidimensional quantum well laser and temperature dependence of it’s threshold current. Appl. Phys. Lett. 80, 939 (1982)ADSCrossRef

Attygalle, M., Nirmalathas, A., Liu, H.F.: All-optical coding of mode-locked semiconductor laser pulse trains for high bit rate optical communications. Opt. Commun. 217, 161 (2003)ADSCrossRef

Caroff, P., Bertru, N., Le Corre, A., Dehaese, O., Rohel, T., Alghoraibi, I., Folliot, H., Loualiche, S.: Achievement of high density InAs quantum dots on InP (311)B substrate emitting at \(1.55\;\mu \text{ m }\). Jpn. J. Appl. Phys. 44, L1069–L1071 (2005)ADSCrossRef

Chang, F.Y., Wu, C.C., Lin, H.H.: Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers. Appl. Phys. Lett. 82, 4477–4479 (2003)ADSCrossRef

Chen, P., Gong, Q., Cao, C.F., Li, S.G., Wang, Y., Liu, Q.B., Yue, L., Zhang, Y.G., Feng, S.L., Ma, C.H., Wang, H.L.: High performance external cavity InAs/InP quantum dot laser. Appl. Phys. Lett. 98, 121101 (2011)ADSCrossRef

Coquin, G.A., Cheung, K.W.: Electronically tunable external-cavity semiconductor laser. Electron. Lett. 24, 599–600 (1988)CrossRef

Cornet, C., Doré, F., Ballestar, A., Even, J., Bertru, N., Le Corre, A., Loualiche, S.: InAsSb/InP quantum dots for midwave infrared emitters: a theoretical study. Appl. Phys. Lett. 98, 126105 (2005)

Dutta, S., Elliott, D.S., Chen, Y.P.: Mode-hop-free tuning over 135 GHz of external cavity diode lasers without antireflection coating. Appl. Phys. B 106, 629–633 (2012)ADSCrossRef

Fathpour, S., Mi, Z., Bhattacharya, P., Kovsh, A.R., Mikhrin, S.S., Krestnikov, I.L., Kozhukhov, A.V., Lendentsov, N.N.: The role Auger recombination in the temperature dependent output characteristics of P-doped \(1.3\, \mu \text{ m }\) quantum dot laser. Appl. Phys. Lett. 85, 5166–5264 (2004)ADSCrossRef

Fedorova, K.A., Cataluna, M.A., Krestnikov, I., Livshits, D., Rafailov, E.U.: Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers. Opt. Express 18, 19438 (2010)CrossRef

Garcia, J.M., Medeiros-Ribeiro, G., Schmidt, K., Ngo, T., Feng, J.L., Lorke, A., Kotthaus, J., Petroff, P.M.: Inter mixing and shape changes during the formation of InAs self-assembled quantum dots. Appl. Phys. Lett. 71, 2014–2016 (1997)ADSCrossRef

Heinrichsdorff, F., Krost, A., Grundmann, M., Bimberg, D., Kosogov, A., Werner, P.: Self-organization processes of InGaAs/GaAs quantum dots grown by metalor-ganic chemical lvapor deposition. Appl. Phys. Lett. 68, 3284–3286 (1996)ADSCrossRef

Heinrichsdorff, F., Mao, M.H., Kirstaedter, N., Krost, A., Bimberg, D., Kosogov, A.O., Werner, P.: Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 71, 22–24 (1997)ADSCrossRef

Hoffmann, M., Sieber, O.D., Wittwer, V.J., Krestnikov, I.L., Livshits, D.A., Barbarin, Y., Südmeyer, T., Keller, U.: Femtosecond high-power quantum dot vertical external cavity surface emitting laser. Opt. Express 19, 8108–8116 (2011)ADSCrossRef

Huang, X., Stintz, A., Li, H., Lester, L.F., Cheng, J., Malloy, K.J.: Passive mode-locking in \(1.3\mu \text{ m }\) two-sections InAs quantum dot laser. Appl. Phys. Lett. 78, 2825–2827 (2001)ADSCrossRef

Hugi, A., Maulini, R., Faist, J.: External cavity quantum cascade laser. Semicond. Sci. Technol. 25, 083001 (2010)ADSCrossRef

Jang, J.W., Ryun, S.H., Lee, S.H., Lee, I.C., Jeong, W.G., Stevenson, R., Daniel, Dapkus P., Kim, N.J., Hwang, M.S., Lee, D.: Room temperature operation ofInGaAs/InGaAsP/InP quantum do tlasers. Appl. Phys. Lett. 85, 3675–3677 (2004)ADSCrossRef

Jang, J.W., Ryun, S.H., Lee, S.H., Lee, I.C., Jeong, W.G., Stevenson, R., Dapkus, P.D., Kim, N.J., Hwang, M.S., Lee, D.: Room temperature operation InGaAs/InGaAsP/InP quantum dots laser. Appl. Phys. Lett. 85, 3674–3676 (2004)ADS

Jayaraman, V., Chuang, Z.M., Coldren, L.A.: Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings. IEEE J. Quantum Electron. 29, 1824–1834 (1993)ADSCrossRef

Joyce, P.B., Krzyzewski, T.J., Steans, P.H., Bell, G.R., Neave, J.H., Jones, T.S.: Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures. J. Cryst. Growth 244, 39–48 (2002)ADSCrossRef

Keeler, G.A., Nelson, B.E., Agarwal, D., Debaes, C., Helman, N.C., Bhatnagar, A., Miller, D.A.B.: The benefits of ultrashort optical pulses in optically interconnected systems. Sel. Top. Quantum Electron. IEEE J. 9, 477–485 (2003)CrossRef

Kim, J.S., Lee, J.H., Hong, S.U., Han, W.S., Kwack, H.-S., Lee, C.W., Oh, D.K.: Room-temperature operation of InP-based InAs quantum dot laser. IEEE Photon. Technol. Lett. 16, 1607–1609 (2004)ADSCrossRef

Kim, H.D., Joeng, W.G., Lee, J.H., Yim, J.S., Lee, D., Stevenson, R., Dapkus, P.D., Jang, J.W., Pyun, S.H.: Continuous-wave operation of \(1.55\mu \text{ m }\) InGaAs/InGaAsP/InP quantum dot laser at room temperature. Appl. Phys. Lett. 87, 083110 (2005)ADSCrossRef

Kloof, F., Deubert, S., Reithmaier, J.P., Forchel, A.: Correlation between the gain profile and the temperature-induced shift in wavelength of quantum dot laser. Appl. Phys. Lett. 81, 217–219 (2002)ADSCrossRef

Kovsh, A.R., Zhukov, A.E., Maleev, N.A., Mikrin, S.S., Livshits, D.A., Shernyakov, Y.M., Maximov, M.V., Pihtin, N.A., Tarasov, I.S., Ustinov, V.M., Alferov, ZhI, Wang, J.S., Wei, L., Lin, G., Chi, J.Y., Ledensov, N.N., Bimberg, D.: High power lasers based on submonolayer InAs/GaAs quantum dots and InGaAs quantum wells. Microelectron. J. 34, 491 (2003)CrossRef

Kuramoto, N., Fujii, K.: Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning. IEEE Trans. Instrum. Meas. 54, 868 (2005)CrossRef

Kwon, O.K., Kim, J.H., Kim, K.H., Sim, E.D., Kim, H.S., Oh, K.R.: Monolithically integrated grating cavity tunable lasers. IEEE Photon. Technol. Lett. 17, 1794–1796 (2008)ADSCrossRef

Lee, A., Jiang, Q., Tang, M., Seeds, A., Liu, H.: Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities. Opt. Express 20, 22182 (2012)ADS

Lelarge, F., Rousseau, B., Dagens, B., Poingt, F., Pommereau, F., Accard, A.: Room temperature continuous-wave operation of buried ridges tripe lasers using InAs-InP (100) quantum dots as active core. IEEE Photon. Technol. Lett. 17, 1369–1371 (2005)ADSCrossRef

Levin, L.: Mode-hop-free electro-optically tuned diode laser. Opt. Lett. 27, 237–239 (2002)ADSCrossRef

Li, H., Liu, G.T., Varangis, P.M., Newell, T.C., Stintz, A., Fuchs, B., Malloy, K.J., Lester, L.F.: 150-nm tuning range in a grating-coupled external cavity quantum-dot laser. IEEE Photon. Technol. Lett. 12, 759–761 (2000)ADSCrossRef

Li, S.G., Gong, Q., Lao, Y.F., He, K., Li, J., Zhang, Y.G., Feng, S.L., Wang, H.L.: Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas source molecular beam epitaxy. Appl. Phys. Lett. 93, 111109 (2008)ADSCrossRef

Li, S.G., Gong, Q., Lao, Y.F., Yang, H.D., Gao, S., Chen, P., Zhang, Y.G., Feng, S.L., Wang, H.L.: Two-colour quantum dot laser with tunable wavelength gap. Appl. Phys. Lett. 95, 251111 (2009)ADSCrossRef

Liu, G.T., Stintz, A., Li, H., Malloy, K.J., Lester, L.F.: Extremely low room-temperature threshold current density diode lasers using InAs dots in \(\text{ In }_{0.15}\text{ Ga }_{0.85}\) As quantum well. IEEE. Electron. Lett. 35, 1163 (1999)CrossRef

Liu, H.Y., Liew, S.L., Badcock, T., Mowbray, D.J., Skolinck, M.S., Ray, S.K., Ray, T.L., Choi, T.L., Groom, K.M., Stevens, B., Hasbullah, F., Jin, C.Y., Hopkinson, M., Hogg, R.A.: P-doped \(1.3\,\mu \text{ m }\) InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Appl. Phys. Lett. 89, 073113 (2006)ADSCrossRef

Liu, J., Lu, Z., Raymond, S., Poole, P.J., Barrios, P.J., Poitras, D.: Dual-wavelength 92.5 GHz self-mode-locked InP-based quantum dot laser. Opt. Lett. 33, 1702–1704 (2008)ADSCrossRef

Liu, H., Wang, T., Jiang, Q., Hogg, R., Tutu, F., Pozzi, F., Seeds, A.: Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat. Photon. 5, 416–419 (2011)ADS

Lonsdale, D.J., Willis, A.P., King, T.A.: Extended tuning and single-mode operation of an anti-reflection-coated InGaN violet laser diode in a Littrow cavity. Meas. Sci. Technol. 13, 488–493 (2002)ADS

Lv, X.Q., Jin, P., Wang, W.Y., Wang, Z.G.: Broadband external cavity tunable quantum dot lasers with low injection current density. Opt. Express 18, 8916 (2010)ADSCrossRef

Ménager, L., Cabaret, L., Lorgeré, I., Le Gouët, J.L.: Diode laser extended cavity for broad-range fast ramping. Opt. Lett. 25, 1246–1248 (2000)ADSCrossRef

Mi, Z., Bhattacharya, P., Fathpour, S.: High-speed \(1.3\, \mu \text{ m }\) tunnel injection quantum dot laser. Appl. Phys. Lett. 86, 153109 (2005)ADSCrossRef

Mroziewicz, B.: External cavity wavelength tunable semiconductor lasers—a review. Opto-Electron. Rev. 16, 347–366 (2008)ADSCrossRef

Nevsky, A.Yu., Bressel, U., Ernsting, I., Eisele, Ch., Okhapkin, M., Schiller, S., Gubenko, A., Livshits, D., Mikhrin, S., Krestnikov, I., Kovsh, A.: A narrow-line-width external cavity quantum dot laser for highresolution spectroscopy in the near-infrared and yellow spectral range. Appl. Phys. B 92, 501–507 (2008)ADSCrossRef

Nikitichev D.I., Cataluna M.A., Ding Y., Fedorova K.A., Krestnikov I., Livshits D., Rafailov E.U., High-power spectral bistability in a multi-section quantum dot laser under continuous-wave or mode-locked operation, in CLEO2011, Paper CThG1 Optical Society of, America (2011)

Nikitichev, D.I., Fedorova, K.A., Ding, Y., Alhazime, A., Able, A., Kaenders, W., Krestnikov, I., Livshits, D., Rafailov, E.U.: Broad wavelength tunability from external cavity quantum-dot mode-locked laser. Appl. Phys. Lett. 101, 121107 (2012)ADSCrossRef

Olesberg, J.T., Arnold, M.A., Mermelstein, C., Schmitz, J., Wagner, J.: Tunable laser diode system for noninvasive blood glucose measurements. Appl. Spectrosc. 59, 1480 (2005)ADSCrossRef

Ortner, G., Allen, C.N., Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P.J., Render, W., Raymond, S.: External cavity InAs/InP quantum dot laser with a tuning range of 166nm. Appl. Phys. Lett. 88, 212119 (2006)CrossRef

Oshinowo, J., Nishioka, M., Ishida, S., Arakawa, Y.: Highly uniform InGaAs/GaAs quantum dots (15nm) by metal organic chemical vapor deposition. Appl. Phys. Lett. 65, 1421–1423 (1994)ADSCrossRef

Paranthoen, C., Bertru, N., Dehaese, O., LeCorre, A., Loualiche, S., Lambert, B., Patriarche, G.: Height dispersion control of InAs/InP quantum dots emitting at \(1.55\,\mu \text{ m }\). Appl. Phys. Lett. 78, 1751–1753 (2001)ADSCrossRef

Paranthoen, C., Bertru, N., Lambert, B., Dehaese, O., Le Corre, A., Even, J., Loualiche, S., Lissillour, F., Moreau, G., Simon, J.C.: Room temperature laser emission of \(1.5\mu \text{ m }\) from InAs/InP(311)B quantum dots. Semicond. Sci. Technol. 17, L5–L7 (2002)ADSCrossRef

Poole, P.J., Kaminska, K., Barrios, P., Lu, Z., Liu, J.: Growth of InAs/InP-based quantum dots for \(1.55\mu \text{ m }\) laser applications. J. Cryst. Growth 311, 1482–1486 (2009)ADSCrossRef

Qiu, Y., Uhl, D., Keo, S.: Continuous-wave operation of InAsSb/InP quantum-dot lasers near \(2\mu \text{ m }\) at room temperature. Appl. Phys. Lett. 84, 263–265 (2004)ADSCrossRef

Saito, H., Nishi, K., Sugou, S.: Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates. Appl. Phys. Lett. 78, 267–269 (2001)ADSCrossRef

Shchekin, O.B., Deppe, D.C.: \(1.3\,\mu \text{ m }\) quantum dot laser with \(\text{ T }_{0}=161\text{ K }\) from 0 to \(80^{\circ }\text{ C }\). Appl. Phys. Lett. 80, 3277–3279 (2002)ADSCrossRef

Steen, W.M., Mazumder, J.: Laser Material Processing, 4th edn. Springer, New York (2010)CrossRef

Tabuchi, H., Ishikawa, H.: External grating tunable MQW laser with wide tuning range of 240 nm. Electron. Lett. 26, 742 (1990)CrossRef

Takabayashi, K., Takada, K., Hashimoto, N., Doi, M., Tomabechi, S., Nakazawa, T., Morito, K.: Widely (132nm) wavelength tunable laser using a semiconductor optical amplifier and an acousto-optic tunable filter. Electron. Lett. 40, 1187–1188 (2004)CrossRef

Tanaka, T., Hibino, Y., Hashimoto, T., Abe, M., Kasahara, R., Tohmori, Y.: 100-GHz spacing 8-channel light source integrated with external cavity lasers on planar lightwave circuit platform. J. Lightwave Technol. 22, 567 (2004)ADSCrossRef

Tohmori, Y., Yoshikuni, Y., Ishii, H., Kano, F., Tamamura, T., Kondo, Y.: Over 100 nm wavelength tuning in superstructure grating (SSG) DBR lasers. Electron. Lett. 29, 352–354 (1993)CrossRef

Uenishi, Y., Honma, K., Nagaoka, S.: Tunable laser diode using a nickel micromachlined external mirror. Electron. Lett. 32, 1207–1208 (1996)CrossRef

Ustinov, V.M., Zhukov, A.E., Maleev, N.A., Kovsh, A.R., Mikhrin, S.S., Volovik, B.V., Musikhin, Yu.G., Shernyakov, Yu.M., Maximov, M.V., Tsatsul, A.F., Nikov, N., Ledentsov, N., Alferov, ZhI, Lott, J.A., Bimberg, D.: \(1.3\,\mu \text{ m }\) InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy. J. Cryst. Growth 227, 1155–1161 (2001)

Varangis, P.M., Li, H., Liu, G.T., Newell, T.C., Stintz, A., Fuchs, B., Malloy, K.J., Lester, L.F.: Low-threshold quantum dot lasers with 201nm tuning range. Electron. Lett. 36, 1544 (2000)CrossRef

Wardle, B.: Principles and Applications of Photochemistry. Wiley, New York (2009)

Woodworth, S.C., Cassidy, D.T., Hamp, M.J.: Sensitive absorption spectroscopy by use of an asymmetric multiple-quantum-well diode laser in an external cavity. Appl. Opt. 40, 6719 (2001)ADSCrossRef

Xie, Q.H., Madhukar, A., Chen, P., Kobayashi, N.P.: Vertically self-organized InAs quantum box islands on GaAs(100). Phys. Rev. Lett. 75, 2542–2545 (1995)ADSCrossRef

Yang, H.P.D., Chang, Y.H., Lai, F.I., Yu, H.C., Hsu, Y.J., Lin, G., Hsiao, R.S., Kuo, H.C., Wang, S.C., Chi, J.Y.: Single mode InAs quantum dot photonic crystal VCSELs. Electron. Lett. 41, 1130–1132 (2005)CrossRef

Yang, H.D., Gong, Q., Li, S.G., Cao, C.F., Xu, C.F., Chen, P., Feng, S.L.: InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy. J. Cryst. Growth 312, 3451–3454 (2010)ADSCrossRef

Title: A review of external cavity-coupled quantum dot lasers
Authors: S. G. Li
Q. Gong
C. F. Cao
X. Z. Wang
J. Y. Yan
Y. Wang
H. L. Wang
Publication date: 01-05-2014
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 5/2014
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-013-9773-2

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