Top

Published in:

19-06-2020 | Electronic materials

All-inkjet-printed high-performance flexible MoS₂ and MoS₂-reduced graphene oxide field-effect transistors

Authors: Zhi Jiang, Kuan Xiao, Jin-Ju Chen, Yan Wang, Zhao-Quan Xu, Enrico Sowade, Reinhard R. Baumann, Evgeniya Sheremet, Raul D. Rodriguez, Zhe-Sheng Feng

Published in: Journal of Materials Science | Issue 27/2020

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS₂ FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 10⁴, and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS₂–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.

previous article Finely modulating the morphology and composition of CuxNi1−x for enhanced microwave absorption capability

next article Electronic and optical properties of gold-doped endohedral fullerenes

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Available only for authorised users

Sangwan VK, Arnold HN, Jariwala D, Marks TJ, Lauhon LJ, Hersam MC (2013) Low-frequency electronic noise in single-layer MoS₂ transistors. Nano Lett 13:4351–4355

Wu C-C, Jariwala D, Sangwan VK, Marks TJ, Hersam MC, Lauhon LJ (2013) Elucidating the photoresponse of ultrathin MoS₂ field-effect transistors by scanning photocurrent microscopy. J Phys Chem Lett 4:2508–2513

He Q, Zeng Z, Yin Z, Li H, Wu S, Huang X et al (2012) Fabrication of flexible MoS₂ thin-film transistor arrays for practical gas-sensing applications. Small 8:2994–2999

Xu H, Wu J, Feng Q, Mao N, Wang C, Zhang J (2014) High responsivity and gate tunable graphene-MoS₂ hybrid phototransistor. Small 10:2300–2306

Liao F, Sheng Y, Guo Z, Tang H, Wang Y, Zong L et al (2019) MoS₂ dual-gate transistors with electrostatically doped contacts. Nano Res 4:2478

Tortorich RP, Choi J-W (2013) Inkjet printing of carbon nanotubes. Nanomaterials 3:453–468

Yanagi K, Udoguchi H, Sagitani S, Oshima Y, Takenobu T, Kataura H et al (2010) Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks. ACS Appl Mater Interfaces 4:4027–4032

Kwon O-S, Kim H, Ko H, Lee J, Lee B, Jung C-H et al (2013) Fabrication and characterization of inkjet-printed carbon nanotube electrode patterns on paper. Carbon 58:116–127

Kang J, Liu W, Sarkar D, Jena D, Banerjee K (2014) Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys Rev X 4:031005

10.

Acerce M, Voiry D, Chhowalla M (2015) Metallic 1T phase MoS₂ nanosheets as supercapacitor electrode materials. Nat Nanotechnol 10:313–318

11.

Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS₂ transistors. Nat Nanotechnol 6:147–150

12.

Chen P-C, Lin C-P, Hong C-J, Yang C-H, Lin Y-Y, Li M-Y et al (2018) Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS₂ transistors. Nano Res 12:303–308

13.

Yang P, Yang A-G, Chen L, Chen J, Zhang Y, Wang H et al (2019) Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide. Nano Res 12:823–827

14.

Li H, Yin Z, He Q, Li H, Huang X, Lu G et al (2012) Fabrication of single- and multilayer MoS₂ film-based field-effect transistors for sensing NO at room temperature. Small 8:63–67

15.

Lee K, Kim HY, Lotya M, Coleman JN, Kim GT, Duesberg GS (2011) Electrical characteristics of molybdenum disulfide flakes produced by liquid exfoliation. Adv Mater 23:4178–4182

16.

Late DJ, Huang Y-K, Liu B, Acharya J, Shirodkar SN, Luo J et al (2013) Sensing behavior of atomically thin-layered MoS₂ transistors. ACS Nano 7:4879–4891

17.

Chung JW, Ko YH, Hong YK, Song W, Jung C, Tang H et al (2014) Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS₂ thin film transistor. Org Electron 15:3038–3042

18.

Shih CJ, Wang QH, Son Y, Jin Z, Blankschtein D, Strano MS (2014) Tuning on–off current ratio and field-effect mobility in a MoS₂-graphene heterostructure via Schottky barrier modulation. ACS Nano 8:5790–5798

19.

Walia S, Balendhran S, Wang Y, Ab Kadir R, Sabirin Zoolfakar A, Atkin P et al (2013) Characterization of metal contacts for two-dimensional MoS₂ nanoflakes. Appl Phys Lett 103:232105

20.

Pu J, Yomogida Y, Liu KK, Li LJ, Iwasa Y, Takenobu T (2012) Highly flexible MoS₂ thin-film transistors with ion gel dielectrics. Nano Lett 12:4013–4017

21.

Castro HF, Sowade E, Rocha JG, Alpuim P, Lanceros-Méndez S, Baumann RR (2014) All-inkjet-printed bottom-gate thin-film transistors using UV curable dielectric for well-defined source-drain electrodes. J Electron Mater 43:2631–2636

22.

Castro HF, Sowade E, Rocha JG, Alpuim P, Machado AV, Baumann RR et al (2015) Degradation of all-inkjet-printed organic thin-film transistors with TIPS-pentacene under processes applied in textile manufacturing. Org Electron 22:12–19

23.

Sowade E, Mitra KY, Ramon E, Martinez-Domingo C, Villani F, Loffredo F et al (2016) Up-scaling of the manufacturing of all-inkjet-printed organic thin-film transistors: device performance and manufacturing yield of transistor arrays. Org Electron 30:237–246

24.

Li J, Naiini MM, Vaziri S, Lemme MC, Östling M (2014) Inkjet printing of MoS2. Adv Funct Mater 24:6524–6531

25.

Li Q, Chen L, Gadinski MR, Zhang S, Zhang G, Li U et al (2015) Flexible high-temperature dielectric materials from polymer nanocomposites. Nature 523:576–579

26.

Akinwande D, Petrone N, Hone J (2014) Two-dimensional flexible nanoelectronics. Nat Commun 5:1–12

27.

Nogi M, Komoda N, Otsuka K, Suganuma K (2013) Foldable nanopaper antennas for origami electronics. Nanoscale 5:4395–4399

28.

Gong C, Hinojos D, Wang W, Nijem N, Shan B, Wallace RM et al (2012) Metal graphene metal sandwich contacts for enhanced interface bonding and work function control. ACS Nano 6:5381–5387

29.

Zhong H, Quhe R, Wang Y, Ni Z, Ye M, Song Z et al (2016) Interfacial properties of monolayer and bilayer MoS₂ contacts with metals: beyond the energy band calculations. Sci Rep 6:1–16

30.

Yoon HS, Joe HE, Jun Kim S, Lee HS, Im S, Min BK et al (2015) Layer dependence and gas molecule absorption property in MoS₂ Schottky diode with asymmetric metal contacts. Sci Rep 5:10440

31.

Yoo G, Lee S, Yoo B, Han C, Kim S, Oh MS (2015) Electrical contact analysis of multilayer MoS₂ transistor with molybdenum source/drain electrodes. IEEE Electron Device Lett 36:1215–1218

32.

Wang J, Yan M, Zhao K, Liao X, Wang P, Pan X et al (2017) Field effect enhanced hydrogen evolution reaction of MoS₂ nanosheets. Adv Mater 29:1604464

33.

Voiry D, Fullon R, Yang J, de Carvalho Castro ESC, Kappera R, Bozkurt I et al (2016) The role of electronic coupling between substrate and 2D MoS₂ nanosheets in electrocatalytic production of hydrogen. Nat Mater 15:1003–1009

34.

Tsai C, Abild-Pedersen F, Norskov JK (2014) Tuning the MoS₂ edge-site activity for hydrogen evolution via support interactions. Nano Lett 14:1381–1387

35.

Liu Y, Guo J, Zhu E, Liao L, Lee SJ, Ding M et al (2018) Approaching the Schottky–Mott limit in van der Waals metal-semiconductor junctions. Nature 557:696–700

36.

Su J, Feng L, Zhang Y, Liu Z (2016) The modulation of Schottky barriers of metal-MoS₂ contacts via BN-MoS₂ heterostructures. Phys Chem Chem Phys 18:16882–16889

37.

Léonard F, Talin AA (2011) Electrical contacts to one- and two-dimensional nanomaterials. Nat Nanotechnol 6:773–783

38.

Wang D, Han D, West D, Chen N-K, Xie S-Y, Tian WQ et al (2019) Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport. NPJ Comput Mater 5:8

39.

Bhattacharjee S, Ganapathi KL, Nath DN, Bhat N (2016) Surface state engineering of metal/MoS₂ contacts using sulfur treatment for reduced contact resistance and variability. IEEE Trans Electron Devices 63:2556–2562

40.

Jiang Z, Zhuang Y, Li C, Wang P (2016) Tunnel dielectric field-effect transistors with high peak-to-valley current ratio. J Electron Mater 46:1088–1092

41.

Jiang Z, Zhuang Y-Q, Li C, Wang P, Liu Y-Q (2017) Impact of low/high-κ spacer–source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor. J Centr S Univ 24:2572–2581

42.

Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479:329–337

43.

Jiang Z, Zhuang Y, Li C, Wang P, Liu Y (2016) Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor. Chin Phys B 25:027701

44.

Rajamohanan B, Mohata D, Ali A, Datta S (2013) Insight into the output characteristics of III–V tunneling field effect transistors. Appl Phys Lett 102:092105

45.

Shih CW, Chin A, Lu CF, Su WF (2016) Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals. Sci Rep 6:19023

46.

Wu TT, Huang WH, Yang CC, Chen HC, Hsieh TY, Lin WS et al (2017) High performance and low power monolithic three-dimensional sub-50 nm poly Si thin film transistor (TFTs) circuits. Sci Rep 7:1368

47.

Liu W, Sarkar D, Kang J, Cao W, Banerjee K (2015) Impact of contact on the operation and performance of back-gated monolayer MoS₂ field-effect-transistors. ACS Nano 9:7904–7912

48.

Lim YR, Han JK, Kim SK, Lee YB, Yoon Y, Kim SJ et al (2018) Roll-to-roll production of layer-controlled molybdenum disulfide: a platform for 2D semiconductor-based industrial applications. Adv Mater 30:1705270

49.

Alsaif MMYA, Chrimes AF, Daeneke T, Balendhran S, Bellisario DO, Son Y et al (2016) High-performance field effect transistors using electronic inks of 2D molybdenum oxide nanoflakes. Adv Funct Mater 26:91–100

50.

Yuan H, Cheng G, Yu S, Hight Walker AR, Richter CA, Pan M et al (2016) Field effects of current crowding in metal-MoS₂ contacts. Appl Phys Lett 108:103505

51.

Kang J, Liu W, Banerjee K (2014) High-performance MoS₂ transistors with low-resistance molybdenum contacts. Appl Phys Lett 104:093106

Title: All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors
Authors: Zhi Jiang
Kuan Xiao
Jin-Ju Chen
Yan Wang
Zhao-Quan Xu
Enrico Sowade
Reinhard R. Baumann
Evgeniya Sheremet
Raul D. Rodriguez
Zhe-Sheng Feng
Publication date: 19-06-2020
Publisher: Springer US
Published in: Journal of Materials Science / Issue 27/2020
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-020-04891-1

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Other articles of this Issue 27/2020

Experimental characterisation and modelling of mechanical behaviour of microcapsules

Effect of energy density on the interface evolution of stainless steel 316L deposited upon INC 625 via directed energy deposition

Defects-aggregated cell boundaries induced domain wall curvature change in Fe-rich Sm–Co–Fe–Cu–Zr permanent magnets

A facile one-step synthesis of highly efficient melamine salt reactive flame retardant for epoxy resin

Monte Carlo simulation of grain refinement during friction stir processing

XRD measurement of stacking fault energy of Cr–Ni austenitic steels: influence of temperature and alloying elements

Premium Partners