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2020 | OriginalPaper | Chapter

2. An Optothermal Field Effect Transistor Based on PMN-26PT Single Crystal

Author : Dr. Huajing Fang

Published in: Novel Devices Based on Relaxor Ferroelectric PMN-PT Single Crystals

Publisher: Springer Singapore

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Abstract

At the end of the nineteenth century, Boolean discovered that logical thinking can be presented in mathematical expressions [1]. Later, John Atanasoff and Claude Shannon advocated the use of binary circuits to implement Boolean logic operations [2]. The transistor is the underlying component that implements the three basic logic gates AND, OR and NOT. It has been studied for about 90 years, dating back to 1925. At that time, German scientist Julius Lilienfeld had proposed to apply a strong electric field to control the charge carriers on the semiconductor surface [3], the idea of adjust the channel conductivity by electric field has been applied for a patent.

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Literature
1.
Liao ZW, Zhang JW (1984) Logical algebra [M]. Science Press
2.
Regan GO (2013) Giants of computing. Springer, London
3.
Hu WP (2006) Transistor. Chem Bull 5:372–381
4.
Brunco DP, De Jaeger B, Eneman G et al (2008) Germanium MOSFET devices: advances in materials understanding, process development, and electrical performance. J Electrochem Soc 155:H552–H561CrossRef
5.
Adinolfi V, Sargent EH (2017) Photovoltage field-effect transistors. Nature 542:324–327CrossRef
6.
Allen BL, Kichambare PD, Star A (2007) Carbon nanotube field-effect-transistor-based biosensors. Adv Mater 19:1439–1451CrossRef
7.
Torsi L, Magliulo M, Manoli K et al (2013) Organic field-effect transistor sensors: a tutorial review. Chem Soc Rev 42:8612–8628CrossRef
8.
Georgiou T, Jalil R, Belle BD et al (2013) Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol 8:100–103CrossRef
9.
Bao ZN, Dodabalapur A, Lovinger AJ (1996) Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility. Appl Phys Lett 69:4108–4110CrossRef
10.
Yang YP, Hu CK, Hu JH et al (2014) Photoelectric technology [M]. China Machine Press
11.
Zhang LJ (2016) Fabrication and optical property study of (2+1)D photonic crystal structure. Doctoral thesis, Tsinghua University
12.
Xu H, Li J, Leung BHK et al (2013) A high-sensitivity near-infrared phototransistor based on an organic bulk heterojunction. Nanoscale 5:11850–11855CrossRef
13.
Nam HJ, Cha J, Lee SH et al (2014) A new mussel-inspired polydopamine phototransistor with high photosensitivity: signal amplification and light-controlled switching properties. Chem Commun 50:1458–1461CrossRef
14.
Rim YS, Yang YM, Bae SH et al (2015) Ultrahigh and broad spectral photodetectivity of an organic-inorganic hybrid phototransistor for flexible electronics. Adv Mater 27:6885–6891CrossRef
15.
Huang Y, Deng HX, Xu K et al (2015) Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets. Nanoscale 7:14093–14099CrossRef
16.
Mas-Balleste R, Gomez-Navarro C, Gomez-Herrero J et al (2011) 2D materials: to graphene and beyond. Nanoscale 3:20–30CrossRef
17.
Tao L, Cinquanta E, Chiappe D et al (2015) Silicene field-effect transistors operating at room temperature. Nat Nanotechnol 10:227–231CrossRef
18.
Lee GH, Yu YJ, Cui X et al (2013) Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. ACS Nano 7:7931–7936CrossRef
19.
Li L, Yu Y, Ye GJ et al (2014) Black phosphorus field-effect transistors. Nat Nanotechnol 9:372–377CrossRef
20.
Xu M, Liang T, Shi M et al (2013) Graphene-like two-dimensional materials. Chem Rev 113:3766–3798CrossRef
21.
Wang QH, Kalantar-Zadeh K, Kis A et al (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7:699–712CrossRef
22.
Woodward RI, Kelleher EJR, Howe RCT et al (2014) Tunable Q-switched fiber laser based on saturable edge-state absorption in few-layer molybdenum disulfide (MoS2). Opt Express 22:31113–31122CrossRef
23.
Zeng H, Dai J, Yao W et al (2012) Valley polarization in MoS2 monolayers by optical pumping. Nat Nanotechnol 7:490–493CrossRef
24.
Tongay S, Zhou J, Ataca C et al (2013) Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett 13:2831–2836CrossRef
25.
Çakır D, Sevik C, Peeters FM (2014) Engineering electronic properties of metal-MoSe2 interfaces using self-assembled monolayers. J Mater Chem C 2:9842–9849CrossRef
26.
Xu K, Huang Y, Chen B et al (2016) Toward high-performance top-gate ultrathin HfS2 field-effect transistors by interface engineering. Small 12:3106–3111CrossRef
27.
Yu Z, Ong ZY, Pan Y et al (2016) Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening. Adv Mater 28:547–552CrossRef
28.
Li Y, Xu CY, Hu P et al (2013) Carrier control of MoS2 nanoflakes by functional self-assembled monolayers. ACS Nano 7:7795–7804CrossRef
29.
Najmaei S, Zou X, Er D et al (2014) Tailoring the physical properties of molybdenum disulfide monolayers by control of interfacial chemistry. Nano Lett 14:1354–1361CrossRef
30.
Duan X, Wang C, Pan A et al (2015) Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem Soc Rev 44:859–8876
31.
Fang HJ, Lin ZY, Wang XS et al (2015) Infrared light gated MoS2 field effect transistor. Opt Express 23:31908–31914CrossRef
32.
Wang CL, Li JC, Zhao ML (2009) Physics of piezoelectrics and ferroelectrics [M]. Science Press
33.
Tang YX (2007) Novel pyroelectric materials and their applications in infrared devices, Doctoral thesis, Shanghai Institute of Ceramics, Chinese Academy of Sciences
34.
Zhang YY, Zhang J (2012) Application of resonance Raman spectroscopy in the characterization of single-walled carbon nanotubes. Acta Chim Sinica 70:2293–2305CrossRef
35.
Luo NN (2015) Design and crystal growth of complex perovskite relaxor ferroelectrics with high Trt. Doctoral thesis, Tsinghua University
36.
Shao SP (1994) Pyroelectric effect and its application [M]. Ordnance Industry Press
37.
Wang X, Feng H, Wu Y et al (2013) Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J Am Chem Soc 135:5304–5307CrossRef
38.
Lee C, Yan H, Brus LE et al (2010) Anomalous lattice vibrations of single-and few-layer MoS2. ACS Nano 4:2695–2700CrossRef
39.
Li H, Zhang Q, Yap CCR et al (2012) From bulk to monolayer MoS2: evolution of Raman scattering. Adv Funct Mater 22:1385–1390CrossRef
40.
Duan X, Wang C, Fan Z et al (2015) Synthesis of WS2x Se2-2x alloy nanosheets with composition-tunable electronic properties. Nano Lett 16:264–269CrossRef
41.
Mak KF, Lee C, Hone J et al (2010) Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 105:136805CrossRef
42.
Deng Y, Luo Z, Conrad NJ et al (2014) Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. ACS Nano 8:8292–8299CrossRef
43.
Black CT, Farrell C, Licata TJ (1997) Suppression of ferroelectric polarization by an adjustable depolarization field. Appl Phys Lett 71:2041–2043CrossRef
44.
Ko C, Lee Y, Chen Y et al (2016) Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory. Adv Mater 28:2923–2930CrossRef
45.
Neamen DH (2003) Semiconductor physics and devices, 3rd edn. McGraw-Hill higher education
46.
Assadi A, Svensson C, Willander M et al (1988) Field-effect mobility of poly(3-hexylthiophene). Appl Phys Lett 53:195–197CrossRef
Metadata
Title
An Optothermal Field Effect Transistor Based on PMN-26PT Single Crystal
Author
Dr. Huajing Fang
Copyright Year
2020
Publisher
Springer Singapore
Book
Novel Devices Based on Relaxor Ferroelectric PMN-PT Single Crystals

Print ISBN: 978-981-15-4311-1

Electronic ISBN: 978-981-15-4312-8

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-981-15-4312-8_2

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