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Semiconductors
Published in: Semiconductors 12/2023

01-12-2023

Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions

Authors: V. K. Eremin, N. N. Fadeeva, D. D. Mitina, E. M. Verbitskaya

Published in: Semiconductors | Issue 12/2023

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Abstract

Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 105 times. The study is focused on the impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV 40Ar ions in the fluence range (1–4) × 109 ion/cm2. It is shown that taking into account only the generation current component is insufficient to explain the experimental I–V curves. Simulating I–V characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated I–V curves.
previous article Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors
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Metadata
Title
Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions
Authors
V. K. Eremin
N. N. Fadeeva
D. D. Mitina
E. M. Verbitskaya
Publication date
01-12-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623080043

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