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Silicon Nitride Ceramics Read chapter Read first chapter

2011 | OriginalPaper | Chapter

6. Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces

Author : Weronika Walkosz

Published in: Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces

Publisher: Springer New York

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Abstract

In this chapter I describe results of the experimental study of \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) interface. This work was carried out in an effort to examine the morphology of \(\hbox{Si}_3\hbox{N}_4\,(10\overline{1}0)\) surface in the absence of rare-earth elements to better understand their importance in stabilizing the ceramics open-ring termination discussed in Chap. 4. The chapter commences with an introduction to \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) interfaces, followed by a short summary of the experimental methods used in this study. Next, the results of the investigation are presented in detail, focusing in particular on the composition and bonding characteristics across the interface.

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previous chapter Atomic-Resolution Study of the Interfacial Bonding at Si3N4/CeO2−δ Grain Boundaries
next chapter Imaging Bulk α-Si3N4
Literature
1.
Liu, L., Xu, J.P., Chen, L.L., Lai, P.: A study on the improved programming characteristics of flash memory with \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) stacked tunneling dielectric. Microelectron. Reliab. 49, (2009)
2.
Saraf, M., Akhvlediani, R., Edrei, R., Shima, R., Roizin, Y., Hoffman, A.: Low thermal budget \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) stacks for advanced SONOS memories. J. Appl. Phys. 102(054512), (2007)
3.
Berberich, S., Godignon, P.E.M., Fonseca, L. J. M., Hartnagel, H.L.: Electrical characterisation of \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) double layers on p-type 6H-SiC. Microelectron. Reliab. 40, 833–836 (2000)
4.
Wang, Y.Q., Hwang, W.S., Zhang, G., Yeo, Y.C.: Electrical characteristics of memory devices with a High-\(k\) \(\hbox{HfO}_{2}\) trapping layer and dual \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4\) tunneling layer. IEEE Trans. Electron Dev. 54(10), 2699–2705 (2007)
5.
Santussi, S., Lozzi, L., Passacantando, M., Phani, A.R., Palumbo, E., Bracchitta, G., De Tommasis, R., Alfonsetti, R., Moccia, G.: Properties of stacked dielectric films composed of \(\hbox{SiO}_2/\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) tunneling layer. J. Non-Cryst. Solids 245, 224–231 (1999)
6.
Kazmierczak, A., Dortu, F., Schrevens, O., Giannone, D., Vivien, L., Marris-Morini, D., Bouville, D., Cassan, E., Gylfason, K.B., Sohlstrom, H.S.B., Griol, A., Hill, D.: Light coupling and distribution for \(\hbox{Si}_3\hbox{N}_4/\hbox{SiO}_2\) integrated mutichannel single-mode sensing system. Opt. Eng. 48(1), (2009)
7.
Winkelman, G.B., Dwyer, C., Marsh, C., Hudson, T.S., Nguyen-Manh, D., Döblinger, M., Cockayne, J.H.: The crystal/glass interface in doped \(\hbox{Si}_3\hbox{N}_4.\) Mater. Sci. Eng. A 422, (2006)
8.
Egerton, R.F.: Applications of energy-loss spectroscopy. In: Electron Energy-Loss Spectroscopy in the Electron Microscopy, 2nd edn. pp. 59–72, Plenum Press, New York (1996)
9.
Wang, P., D’Alfonso, A.J., Findlay, S.D., Allen, L.J., Bleloch, A.L.: Contrast reversal in atomic-resolution chemical mapping. Phys. Rev. Lett. 101(236102), (2008)
10.
Kimoto, K., Ishizuka, K., Matsui, Y.: Decisive factors for realizing atomic-column resolution using STEM and EELS. Micron. 39, (2008)
11.
Ziegler, A., Idrobo, J.C., Cinibulk, M.K., Kisielowski, C., Browning, N.D., Ritchie, R.O.: Interface structure and atomic bonding characteristics in silicon nitride ceramics. Science 306(1768), (2004)
12.
Van Benthem, K., Painter, G.S., Averill, F.W., Pennycook, S., Becher, P.F.: Experimental probe of adsorbate binding energies at internal crystalline/amorphous interfaces in Gd-doped \(\hbox{Si}_3\hbox{N}_4.\) Appl. Phys. Lett. 92, (2008)
13.
Mkhoyan, K.A., Silcox, J.: Electron-beam-induced damage in wurtzite InN. Appl. Phys. Lett. 82(6), (2002)
14.
Levin, I., Leapman, R.D., Kovler M., Roizin, Y.: Radiation-induced nitrogen segregation during electron energy loss spectroscopy of silicon-oxide-nitride-oxide stacks. Appl. Phys. Lett. 83(8), (2003)
15.
Batson, P.E.: Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity. Nature 366, 727–728 (1993)
16.
Browning, N.D., Chisholm, M.F., Pennycook, S.J.: Atomic-resolution chemical analysis using a scanning transmission electron microscope. Nature 366, 143–146 (1993)
17.
Brydson, R.: Electron energy-Loss spectroscopy and energy dispersive X-ray analysis. In: Kirkland, A.I., Hutchison, J.L. (eds.) Nanocharacterisation, pp. 94–136. The Royal Society of Chemistry, Cambridge (2007)
18.
19.
Benco, L.: Chemical bonding at grain boundaries: MgO on \(\beta\)-\(\hbox{Si}_3\hbox{N}_4.\) Surf. Sci. 327, 274–284 (1995)
Metadata
Title
Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces
Author
Weronika Walkosz
Copyright Year
2011
Publisher
Springer New York
Book
Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces

Print ISBN: 978-1-4419-7816-5

Electronic ISBN: 978-1-4419-7817-2

Copyright Year: 2011

DOI
https://doi.org/10.1007/978-1-4419-7817-2_6

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