Calculation of intersubband absorption in n-doped BaSnO₃ quantum wells

In this paper, we theoretically investigate intersubband absorption in La-doped BaSnO₃/BaO perovskite-oxide double and triple symmetrical quantum wells. The goal is to assess the emerging possibilities offered by perovskite heterostructures for realization of oxide-based quantum well optoelectronic devices. Properties such as small electron effective mass, very high room-temperature mobility of BaSnO₃, large conduction band offset between the two materials, are all promising for technological applications. Some of the possible applications include active n-channel materials in p-n junctions, field-effect transistors, ferroelectric field-effect transistors, sensitive UV photoconductors, and electron transport layers in perovskite solar cells. We are interested in tuning of the absorption spectra via quantum well width modulation, changing of doping density and variation of external electric field along the growth direction which is important for application in electro-optical light modulators. The electronic structure is calculated self-consistently by solving the Schrödinger–Poisson system of equations where the exchange correlation effects are also taken into the account.