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Semiconductors
Published in: Semiconductors 11/2023

01-11-2023

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption

Authors: S. N. Timoshnev, G. V. Benemanskaya, A. M. Mizerov, M. S. Sobolev, Ya. B. Enns

Published in: Semiconductors | Issue 11/2023

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Abstract

The electronic structure of the epitaxial GaN/Si(111) layers and the Li/GaN/Si(111) interface with a monolayer Li coverage has been studied in situ under ultrahigh vacuum conditions. The experiments were carried out using photo electron spectroscopy with synchrotron radiation in the photon energy range 75–850 eV. The photoemission spectra in the valence band and the core levels of Ga 3d, N 1s, and Li 1s are studied for the monolayer Li coating. It is found that Li adsorption causes a significant decrease in the intensity of the photoemission line of the intrinsic surface state and the appearance of an induced surface state due to charge transfer between the adsorbed Li layer and surface Ga atoms. It has been found that the GaN/Si(111) surface has predominantly Ga polarity. The Li/GaN/Si(111) interface has a semiconductor character.
previous article Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors
next article Internal Loss in Diode Lasers with Quantum Well-Dots

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Metadata
Title
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption
Authors
S. N. Timoshnev
G. V. Benemanskaya
A. M. Mizerov
M. S. Sobolev
Ya. B. Enns
Publication date
01-11-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378262308016X

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