Skip to main content
Top

2007 | OriginalPaper | Chapter

9. Charge Transport in Disordered Materials

Authors : Sergei Baranovskii, Prof., Oleg Rubel, Dr.

Published in: Springer Handbook of Electronic and Photonic Materials

Publisher: Springer US

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

This chapter surveys general theoretical concepts developed to qualitatively understand and to quantitatively describe the electrical conduction properties of disordered organic and inorganic materials. In particular, these concepts are applied to describe charge transport in amorphous and microcrystalline semiconductors and in conjugated and molecularly doped polymers. Electrical conduction in such systems is achieved through incoherent transitions of charge carriers between spatially localized states. Basic theoretical ideas developed to describe this type of electrical conduction are considered in detail. Particular attention is given to the way the kinetic coefficients depend on temperature, the concentration of localized states, the strength of the applied electric field, and the charge carrier localization length. Charge transport via delocalized states in disordered systems and the relationships between kinetic coefficients under the nonequilibrium conditions are also briefly reviewed.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
9.1.
go back to reference A. Bunde, K. Funke, M. D. Ingram: Solid State Ionics 105, 1 (1998)CrossRef A. Bunde, K. Funke, M. D. Ingram: Solid State Ionics 105, 1 (1998)CrossRef
9.2.
9.3.
go back to reference C. Brabec, V. Dyakonov, J. Parisi, N. S. Sariciftci: Organic Photovoltaics: Concepts and Realization (Springer, Berlin, Heidelberg 2003) C. Brabec, V. Dyakonov, J. Parisi, N. S. Sariciftci: Organic Photovoltaics: Concepts and Realization (Springer, Berlin, Heidelberg 2003)
9.4.
go back to reference M. H. Brodsky: Amorphous Semiconductors (Springer, Berlin, Heidelberg 1979) M. H. Brodsky: Amorphous Semiconductors (Springer, Berlin, Heidelberg 1979)
9.5.
go back to reference G. Hadziioannou, P. F. van Hutten: Semiconducting Polymers (Wiley, New York 2000) G. Hadziioannou, P. F. van Hutten: Semiconducting Polymers (Wiley, New York 2000)
9.6.
go back to reference J. D. Joannopoulos, G. Locowsky: The Physics of Hydrogenated Amorphous Silicon I (Springer, Berlin, Heidelberg 1984)CrossRef J. D. Joannopoulos, G. Locowsky: The Physics of Hydrogenated Amorphous Silicon I (Springer, Berlin, Heidelberg 1984)CrossRef
9.7.
go back to reference J. D. Joannopoulos, G. Locowsky: The Physics of Hydrogenated Amorphous Silicon II (Springer, Berlin, Heidelberg 1984)CrossRef J. D. Joannopoulos, G. Locowsky: The Physics of Hydrogenated Amorphous Silicon II (Springer, Berlin, Heidelberg 1984)CrossRef
9.8.
go back to reference A. Madan, M. P. Shaw: The Physics and Applications of Amorphous Semiconductors (Academic, New York 1988) A. Madan, M. P. Shaw: The Physics and Applications of Amorphous Semiconductors (Academic, New York 1988)
9.9.
go back to reference M. Pope, C. E. Swenberg: Electronic Processes in Organic Crystals and Polymers (Oxford Univ. Press, Oxford 1999) M. Pope, C. E. Swenberg: Electronic Processes in Organic Crystals and Polymers (Oxford Univ. Press, Oxford 1999)
9.10.
go back to reference J. Singh, K. Shimakawa: Advances in Amorphous Semiconductors (Gordon and Breach/Taylor & Francis, London 2003)CrossRef J. Singh, K. Shimakawa: Advances in Amorphous Semiconductors (Gordon and Breach/Taylor & Francis, London 2003)CrossRef
9.11.
go back to reference R. A. Street: Hydrogenated Amorphous Silicon, Cambridge Solid State Science Series (Cambridge Univ. Press, Cambridge 1991)CrossRef R. A. Street: Hydrogenated Amorphous Silicon, Cambridge Solid State Science Series (Cambridge Univ. Press, Cambridge 1991)CrossRef
9.12.
go back to reference K. Tanaka, E. Maruyama, T. Shimada, H. Okamoto: Amorphous Silicon (Wiley, New York 1999) K. Tanaka, E. Maruyama, T. Shimada, H. Okamoto: Amorphous Silicon (Wiley, New York 1999)
9.13.
go back to reference J. S. Dugdale: The Electrical Properties of Disordered Metals, Cambridge Solid State Science Series (Cambridge Univ. Press, Cambridge 1995)CrossRef J. S. Dugdale: The Electrical Properties of Disordered Metals, Cambridge Solid State Science Series (Cambridge Univ. Press, Cambridge 1995)CrossRef
9.14.
go back to reference B. I. Shklovskii, A. L. Efros: Electronic Properties of Doped Semiconductors (Springer, Berlin, Heidelberg 1984) B. I. Shklovskii, A. L. Efros: Electronic Properties of Doped Semiconductors (Springer, Berlin, Heidelberg 1984)
9.15.
go back to reference I. P. Zvyagin: Kinetic Phenomena in Disordered Semiconductors (Moscow University Press, Moscow 1984) (in Russian) I. P. Zvyagin: Kinetic Phenomena in Disordered Semiconductors (Moscow University Press, Moscow 1984) (in Russian)
9.16.
go back to reference H. Böttger, V. V. Bryksin: Hopping Conduction in Solids (Wiley, New York 1985) H. Böttger, V. V. Bryksin: Hopping Conduction in Solids (Wiley, New York 1985)
9.17.
go back to reference H. Overhof, P. Thomas: Electronic Transport in Hydrogenated Amorphous Semiconductors (Springer, Berlin, Heidelberg 1989) H. Overhof, P. Thomas: Electronic Transport in Hydrogenated Amorphous Semiconductors (Springer, Berlin, Heidelberg 1989)
9.20.
go back to reference A. L. Efros, M. E. Raikh: Effects of Composition Disorder on the Electronic Properties of Semiconducting Mixed Crystals. In: Optical Properties of Mixed Crystals, ed. by R. J. Elliott, I. P. Ipatova (Elsevier, New York 1988) A. L. Efros, M. E. Raikh: Effects of Composition Disorder on the Electronic Properties of Semiconducting Mixed Crystals. In: Optical Properties of Mixed Crystals, ed. by R. J. Elliott, I. P. Ipatova (Elsevier, New York 1988)
9.21.
9.22.
9.23.
go back to reference I. S. Shlimak, A. L. Efros, I. V. Yanchev: Sov. Phys. Semicond. 11, 149 (1977) I. S. Shlimak, A. L. Efros, I. V. Yanchev: Sov. Phys. Semicond. 11, 149 (1977)
9.24.
go back to reference S. D. Baranovskii, A. L. Efros: Sov. Phys. Semicond. 12, 1328 (1978) S. D. Baranovskii, A. L. Efros: Sov. Phys. Semicond. 12, 1328 (1978)
9.25.
9.26.
9.27.
go back to reference V. Venkataraman, C. W. Liu, J. C. Sturm: Appl. Phys. Lett. 63, 2795 (1993)CrossRef V. Venkataraman, C. W. Liu, J. C. Sturm: Appl. Phys. Lett. 63, 2795 (1993)CrossRef
9.28.
go back to reference C. Michel, P. J. Klar, S. D. Baranovskii, P. Thomas: Phys. Rev. B 69, 165211–1 (2004)CrossRef C. Michel, P. J. Klar, S. D. Baranovskii, P. Thomas: Phys. Rev. B 69, 165211–1 (2004)CrossRef
9.32.
go back to reference N. F. Mott, E. A. Davis: Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford 1971) N. F. Mott, E. A. Davis: Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford 1971)
9.33.
9.35.
go back to reference S. D. Baranovskii, A. L. Efros, B. L. Gelmont, B. I. Shklovskii: J. Phys. C 12, 1023 (1979)CrossRef S. D. Baranovskii, A. L. Efros, B. L. Gelmont, B. I. Shklovskii: J. Phys. C 12, 1023 (1979)CrossRef
9.36.
go back to reference I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S. D. Baranovskii, H. Vaupel, P. Thomas, R. W. van der Heijden: Phys. Rev. Lett. 75, 4764 (1995)CrossRef I. Shlimak, M. Kaveh, R. Ussyshkin, V. Ginodman, S. D. Baranovskii, H. Vaupel, P. Thomas, R. W. van der Heijden: Phys. Rev. Lett. 75, 4764 (1995)CrossRef
9.37.
go back to reference S. D. Baranovskii, P. Thomas, G. J. Adriaenssens: J. Non-Cryst. Solids 190, 283 (1995)CrossRef S. D. Baranovskii, P. Thomas, G. J. Adriaenssens: J. Non-Cryst. Solids 190, 283 (1995)CrossRef
9.38.
9.39.
9.40.
9.42.
go back to reference B. I. Shklovskii, E. I. Levin, H. Fritzsche, S. D. Baranovskii: Hopping photoconductivity in amorphous semiconductors: dependence on temperature, electric field and frequency. In: Advances in Disordered Semiconductors, Vol. 3, ed. by H. Fritzsche (World Scientific, Singapore 1990) p. 3161 B. I. Shklovskii, E. I. Levin, H. Fritzsche, S. D. Baranovskii: Hopping photoconductivity in amorphous semiconductors: dependence on temperature, electric field and frequency. In: Advances in Disordered Semiconductors, Vol. 3, ed. by H. Fritzsche (World Scientific, Singapore 1990) p. 3161
9.43.
go back to reference S. D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G. J. Adriaenssens: J. Non-Cryst. Solids 190, 117 (1995)CrossRef S. D. Baranovskii, F. Hensel, K. Ruckes, P. Thomas, G. J. Adriaenssens: J. Non-Cryst. Solids 190, 117 (1995)CrossRef
9.44.
go back to reference M. Hoheisel, R. Carius, W. Fuhs: J. Non-Cryst. Solids 63, 313 (1984)CrossRef M. Hoheisel, R. Carius, W. Fuhs: J. Non-Cryst. Solids 63, 313 (1984)CrossRef
9.45.
9.46.
go back to reference J.-H. Zhou, S. D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda, P. Thomas: Phys. Status Solidi B 205, 147 (1998)CrossRef J.-H. Zhou, S. D. Baranovskii, S. Yamasaki, K. Ikuta, K. Tanaka, M. Kondo, A. Matsuda, P. Thomas: Phys. Status Solidi B 205, 147 (1998)CrossRef
9.47.
go back to reference B. I. Shklovskii, H. Fritzsche, S. D. Baranovskii: Phys. Rev. Lett. 62, 2989 (1989)CrossRef B. I. Shklovskii, H. Fritzsche, S. D. Baranovskii: Phys. Rev. Lett. 62, 2989 (1989)CrossRef
9.48.
go back to reference S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G. J. Adriaenssense: J. Non-Cryst. Solids 198-200, 214 (1996)CrossRef S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas, G. J. Adriaenssense: J. Non-Cryst. Solids 198-200, 214 (1996)CrossRef
9.49.
9.50.
go back to reference S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: Phys. Status Solidi B 205, 87 (1998)CrossRef S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: Phys. Status Solidi B 205, 87 (1998)CrossRef
9.51.
go back to reference S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: J. Non-Cryst. Solids 227-230, 158 (1998)CrossRef S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: J. Non-Cryst. Solids 227-230, 158 (1998)CrossRef
9.52.
go back to reference A. Nagy, M. Hundhausen, L. Ley, G. Brunst, E. Holzenkämpfer: J. Non-Cryst. Solids 164-166, 529 (1993)CrossRef A. Nagy, M. Hundhausen, L. Ley, G. Brunst, E. Holzenkämpfer: J. Non-Cryst. Solids 164-166, 529 (1993)CrossRef
9.53.
go back to reference C. E. Nebel, R. A. Street, N. M. Johanson, C. C. Tsai: Phys. Rev. B 46, 6803 (1992)CrossRef C. E. Nebel, R. A. Street, N. M. Johanson, C. C. Tsai: Phys. Rev. B 46, 6803 (1992)CrossRef
9.54.
9.55.
go back to reference K. Murayama, H. Oheda, S. Yamasaki, A. Matsuda: Solid State Commun. 81, 887 (1992)CrossRef K. Murayama, H. Oheda, S. Yamasaki, A. Matsuda: Solid State Commun. 81, 887 (1992)CrossRef
9.56.
go back to reference C. E. Nebel, R. A. Street, N. M. Johanson, J. Kocka: Phys. Rev. B 46, 6789 (1992)CrossRef C. E. Nebel, R. A. Street, N. M. Johanson, J. Kocka: Phys. Rev. B 46, 6789 (1992)CrossRef
9.57.
go back to reference B. I. Shklovskii: Sov. Phys. Semicond. 6, 1964 (1973) B. I. Shklovskii: Sov. Phys. Semicond. 6, 1964 (1973)
9.58.
9.59.
go back to reference S. D. Baranovskii, B. Cleve, R. Hess, P. Thomas: J. Non-Cryst. Solids 164-166, 437 (1993)CrossRef S. D. Baranovskii, B. Cleve, R. Hess, P. Thomas: J. Non-Cryst. Solids 164-166, 437 (1993)CrossRef
9.60.
9.61.
go back to reference B. Cleve, B. Hartenstein, S. D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler: Phys. Rev. B 51, 16705 (1995)CrossRef B. Cleve, B. Hartenstein, S. D. Baranovskii, M. Scheidler, P. Thomas, H. Baessler: Phys. Rev. B 51, 16705 (1995)CrossRef
9.62.
9.64.
9.65.
go back to reference H. Bässler: Advances in Disordered Semiconductors. In: Hopping and Related Phenomena, Vol. 2, ed. by M. Pollak, H. Fritzsche (World Scientific, Singapore 1990) p. 491 H. Bässler: Advances in Disordered Semiconductors. In: Hopping and Related Phenomena, Vol. 2, ed. by M. Pollak, H. Fritzsche (World Scientific, Singapore 1990) p. 491
9.66.
go back to reference G. Schönherr, H. Bässler, M. Silver: Philos. Mag. B 44, 369 (1981)CrossRef G. Schönherr, H. Bässler, M. Silver: Philos. Mag. B 44, 369 (1981)CrossRef
9.67.
9.68.
go back to reference P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser: Phys. Status Solidi A 166, 835 (1998)CrossRef P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser: Phys. Status Solidi A 166, 835 (1998)CrossRef
9.69.
go back to reference P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser, D. E. Schildkraut: J. Polym. Sci. Polym. Phys. 37, 349 (1999)CrossRef P. M. Borsenberger, W. T. Gruenbaum, E. H. Magin, S. A. Visser, D. E. Schildkraut: J. Polym. Sci. Polym. Phys. 37, 349 (1999)CrossRef
9.70.
go back to reference A. Nemeth-Buhin, C. Juhasz: Hole transport in 1,1-bis(4-diethylaminophenyl)-4,4-diphenyl-1,3-butadiene. In: Hopping and Related Phenomena, ed. by O. Millo, Z. Ovadyahu (Racah Institute of Physics, The Hebrew University Jerusalem, Jerusalem 1995) pp. 410–415 A. Nemeth-Buhin, C. Juhasz: Hole transport in 1,1-bis(4-diethylaminophenyl)-4,4-diphenyl-1,3-butadiene. In: Hopping and Related Phenomena, ed. by O. Millo, Z. Ovadyahu (Racah Institute of Physics, The Hebrew University Jerusalem, Jerusalem 1995) pp. 410–415
9.71.
go back to reference A. Ochse, A. Kettner, J. Kopitzke, J.-H. Wendorff, H. Bässler: Chem. Phys. 1, 1757 (1999)CrossRef A. Ochse, A. Kettner, J. Kopitzke, J.-H. Wendorff, H. Bässler: Chem. Phys. 1, 1757 (1999)CrossRef
9.73.
go back to reference U. Wolf, H. Bässler, P. M. Borsenberger, W. T. Gruenbaum: Chem. Phys. 222, 259 (1997)CrossRef U. Wolf, H. Bässler, P. M. Borsenberger, W. T. Gruenbaum: Chem. Phys. 222, 259 (1997)CrossRef
9.74.
go back to reference M. Grünewald, B. Pohlmann, B. Movaghar, D. Würtz: Philos. Mag. B 49, 341 (1984) M. Grünewald, B. Pohlmann, B. Movaghar, D. Würtz: Philos. Mag. B 49, 341 (1984)
9.75.
go back to reference B. Movaghar, M. Grünewald, B. Ries, H. Bässler, D. Würtz: Phys. Rev. B 33, 5545 (1986)CrossRef B. Movaghar, M. Grünewald, B. Ries, H. Bässler, D. Würtz: Phys. Rev. B 33, 5545 (1986)CrossRef
9.76.
go back to reference S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: J. Phys. C 9, 2699 (1997) S. D. Baranovskii, T. Faber, F. Hensel, P. Thomas: J. Phys. C 9, 2699 (1997)
9.77.
go back to reference S. D. Baranovskii, H. Cordes, F. Hensel, G. Leising: Phys. Rev. B 62, 7934 (2000)CrossRef S. D. Baranovskii, H. Cordes, F. Hensel, G. Leising: Phys. Rev. B 62, 7934 (2000)CrossRef
9.80.
go back to reference O. Rubel, S. D. Baranovskii, P. Thomas, S. Yamasaki: Phys. Rev. B 69, 014206–1 (2004)CrossRef O. Rubel, S. D. Baranovskii, P. Thomas, S. Yamasaki: Phys. Rev. B 69, 014206–1 (2004)CrossRef
9.81.
go back to reference W. D. Gill: Electron mobilities in disordred and crystalline tritrofluorenone. In: Proc. Fifth Int. Conf. of Amorphous and Liquid Semiconductors, ed. by J. Stuke, W. Brenig (Taylor and Francis, London 1974) p. 901 W. D. Gill: Electron mobilities in disordred and crystalline tritrofluorenone. In: Proc. Fifth Int. Conf. of Amorphous and Liquid Semiconductors, ed. by J. Stuke, W. Brenig (Taylor and Francis, London 1974) p. 901
9.82.
go back to reference S. D. Baranovskii, I. P. Zvyagin, H. Cordes, S. Yamasaki, P. Thomas: Phys. Status Solidi B 230, 281 (2002)CrossRef S. D. Baranovskii, I. P. Zvyagin, H. Cordes, S. Yamasaki, P. Thomas: Phys. Status Solidi B 230, 281 (2002)CrossRef
Metadata
Title
Charge Transport in Disordered Materials
Authors
Sergei Baranovskii, Prof.
Oleg Rubel, Dr.
Copyright Year
2007
Publisher
Springer US
DOI
https://doi.org/10.1007/978-0-387-29185-7_9