Advertisement
Published in:
2007 | OriginalPaper | Chapter
Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects
Authors : N. Sadachika, H. Oka, R. Tanabe, T. Murakami, H. J. Mattausch, M. Miura-Mattausch
Published in: Simulation of Semiconductor Processes and Devices 2007
Publisher: Springer Vienna
Activate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
The compact double-gate MOSFET model HiSIM-DG considering the volume inversion effects is developed solving the Poisson equation iteratively including bulk charge. The developed model reproduces the bias dependence of not only the surface but also the center potential of the silicon layer. The model proves accurate dependence of silicon layer thickness in comparison to the 2 dimensional device simulation results. It is observed that the volume inversion effect prevents devices from performance degradation for a reduction of device sizes.