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Technical Physics

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01-08-2019 | SOLID STATE ELECTRONICS

Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides

Authors: B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko

Published in: Technical Physics | Issue 8/2019

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Abstract

The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n⁺-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.

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Title: Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides
Authors: B. A. Matveev
V. I. Ratushnyi
A. Yu. Rybal’chenko
Publication date: 01-08-2019
Publisher: Pleiades Publishing
Published in: Technical Physics / Issue 8/2019
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI: https://doi.org/10.1134/S1063784219080140

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