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2020 | OriginalPaper | Chapter

Computation of Gate-Induced-Drain-Leakage Current Due to Band-to-Band Tunneling for Ultrathin MOSFET

Authors : Krishnendu Roy, Anal Roy Chowdhury, Arpan Deyasi

Published in: Information, Photonics and Communication

Publisher: Springer Singapore

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Abstract

In this paper, gate-induced-drain-leakage current due to band-to-band tunneling is analytically computed in nanometric MOSFET under high electric field. Fowler-Nordheim tunneling current is first calculated for different dielectric thicknesses with some alteration of Hu’s model, and dominance of thermionic current is established. Under this criterion, B–B tunneling current is evaluated as leakage arises due to the overlap of gate over source and drain regions, and dielectric properties along with doping concentration and temperature are taken into account following Kane’s tunneling probability. Role of high-K dielectric material is also analyzed for nanoscale application. Result shows that higher overlapping of gate length due to lateral diffusion of source and drain regions tailors the leakage current. Findings are extremely important for use of the device as SRAM.

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next chapter Investigating Effect of Structural Parameters on Static Characteristics of Ultrathin DG MOSFET Using Taur’s Model
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Metadata
Title
Computation of Gate-Induced-Drain-Leakage Current Due to Band-to-Band Tunneling for Ultrathin MOSFET
Authors
Krishnendu Roy
Anal Roy Chowdhury
Arpan Deyasi
Copyright Year
2020
Publisher
Springer Singapore
Book
Information, Photonics and Communication

Print ISBN: 978-981-329-452-3

Electronic ISBN: 978-981-329-453-0

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-981-32-9453-0_1