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Published in:
01-02-2013
Dense PLZT films grown on nickel substrates by PVP-modified sol–gel method
Published in: Journal of Materials Science | Issue 3/2013
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Abstract
We have successfully grown ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films on base metal foils by chemical solution deposition using sol–gel solutions containing polyvinylpyrrolidone. Under zero-bias field, we measured a dielectric constant of ≈820 and dielectric loss of ≈0.06 at room temperature, and a dielectric constant of ≈1250 and dielectric loss of ≈0.03 at 150 °C. In addition, leakage current density of ≈1.5 × 10−8 A/cm2, remanent polarization of ≈11.2 μC/cm2, and coercive field of ≈40.6 kV/cm were measured at room temperature on a ≈3-μm-thick PLZT film grown on LaNiO3-buffered nickel substrate. Finally, energy density ≈25 J/cm3 was measured from the P–E hysteresis loop at an applied field of 2 × 106 V/cm.