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Semiconductors
Published in: Semiconductors 1/2008

01-01-2008 | Semiconductor Structures, Interfaces, and Surfaces

Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system

Authors: A. V. Khaneft, A. S. Poplavnoi, B. A. Sechkarev, L. V. Sotnikova

Published in: Semiconductors | Issue 1/2008

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previous article Electrical properties of proton-irradiated CdSnAs2
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Metadata
Title
Dependence of the band bending at the AgBr-AgI microcontact interface on the shape and size of the heterogeneous system
Authors
A. V. Khaneft
A. S. Poplavnoi
B. A. Sechkarev
L. V. Sotnikova
Publication date
01-01-2008
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2008
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782608010053

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Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

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The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

Electronic and Optical Properties of Semiconductors

Electrical properties of proton-irradiated CdSnAs2

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Optical spectroscopy of free excitons in a CuInS2 chalcopyrite semiconductor compound

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