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A Novel Methodology to Detect Bone Cancer Stage Using Mean Intensity of MRI Imagery and Region Growing Algorithm Read chapter Read first chapter

2016 | OriginalPaper | Chapter

Design and Analysis of High Performance CMOS Temperature Sensor Using VCO

Authors : Kumkum Verma, Sanjay Kumar Jaiswal, K. K. Verma, Ronak Shirmal

Published in: Proceedings of the International Congress on Information and Communication Technology

Publisher: Springer Singapore

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Abstract

This paper presents a CMOS temperature sensor which is designed using self-bias differential voltage controlled ring oscillator at 180 nm TSMC CMOS technology to achieve low power. This paper focuses on design, simulation, and performance analysis of temperature sensor and its various components. In this used VCRO has full range voltage controllability along with a wide tuning range from 185 to 810 MHz, with free running frequency of 93 MHz. Power dissipation of voltage controlled ring oscillator at 1.8 V power supply is 438.91 µW. Different parameters like delay and power dissipation of individual blocks like CMOS temperature sensor component, voltage level shifter, counter and edge triggered D flip-flop are also calculated with respect to different power supply and threshold voltages. Power dissipation and delay of VCRO-based temperature sensor at 5 V power supply is 80.88 mW and 7.656 nS, respectively, and temperature range is from −175 to +165.

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previous chapter Experimenting Large Prime Numbers Generation in MPI Cluster
next chapter High Performance Add Drop Filter Based on PCRR for ITU-T G.694.2 CWDM System
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Metadata
Title
Design and Analysis of High Performance CMOS Temperature Sensor Using VCO
Authors
Kumkum Verma
Sanjay Kumar Jaiswal
K. K. Verma
Ronak Shirmal
Copyright Year
2016
Publisher
Springer Singapore
Book
Proceedings of the International Congress on Information and Communication Technology

Print ISBN: 978-981-10-0754-5

Electronic ISBN: 978-981-10-0755-2

Copyright Year: 2016

DOI
https://doi.org/10.1007/978-981-10-0755-2_8