Skip to main content
Top
Published in: Optical and Quantum Electronics 11/2018

01-11-2018

Determining junction temperature based on material properties and geometric structures of LEDs

Authors: Ching-Yen Ho, Song-Feng Wan, Bor-Chyuan Chen, Long-Gen Li, Si-Li Fan, Chang-Wei Xiong

Published in: Optical and Quantum Electronics | Issue 11/2018

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Based on the material properties and geometric structures of LEDs, this paper proposes an analytical model for predicting the junction temperature. The parameters relevant to the junction temperature are calculated using the material properties and geometric structures of LEDs. The junction temperature of AlGaInP LED predicted from this work agrees with the available experimental data. Effects of LED working parameters and material properties on the junction temperatures are discussed in this study.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
go back to reference Chen, K., Narendran, N.: Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. Microelectron. Reliab. 53, 701–705 (2013)CrossRef Chen, K., Narendran, N.: Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis. Microelectron. Reliab. 53, 701–705 (2013)CrossRef
go back to reference Chen, B.C., Chen, K.H., Yu, J.W., Ho, C.Y., Wen, M.Y.: Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes. Opt. Quant. Electron. 49, 183 (2017)CrossRef Chen, B.C., Chen, K.H., Yu, J.W., Ho, C.Y., Wen, M.Y.: Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes. Opt. Quant. Electron. 49, 183 (2017)CrossRef
go back to reference Chhajed, S., Xi, Y., Gessmann, Th., Xi, J.Q., Shah, J.M., Kim, J.K., Schubert, E.F.: Junction temperature in light-emitting diodes assessed by different methods. In: Progress in Biomedical Optics and Imaging—Proceedings of SPIE, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, vol. 5739, pp. 16–24 (2005) Chhajed, S., Xi, Y., Gessmann, Th., Xi, J.Q., Shah, J.M., Kim, J.K., Schubert, E.F.: Junction temperature in light-emitting diodes assessed by different methods. In: Progress in Biomedical Optics and Imaging—Proceedings of SPIE, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, vol. 5739, pp. 16–24 (2005)
go back to reference Eugene, H., Nadarajah, N.: A method for projecting useful life of LED lighting systems. Proc. Soc. Photo Opt. Inst. Eng. 5187, 93–99 (2004) Eugene, H., Nadarajah, N.: A method for projecting useful life of LED lighting systems. Proc. Soc. Photo Opt. Inst. Eng. 5187, 93–99 (2004)
go back to reference Feng, R., Jie, G., Hao, X.: Determining the junction temperature of GaN-based blue LED with the double spectral parameter. J. Optoelectron. Laser 26, 2083–2088 (2015) Feng, R., Jie, G., Hao, X.: Determining the junction temperature of GaN-based blue LED with the double spectral parameter. J. Optoelectron. Laser 26, 2083–2088 (2015)
go back to reference Fischer, A.J., Allerman, A.A., Crawford, M.H., Bogart, K.H.A., Lee, S.R., Kaplar, R.J., Chow, W.W., Kurtz, S.R., Fullmer, K.W., Figiel, J.J.: Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels. Appl. Phys. Lett. 84, 3394–3396 (2004)ADSCrossRef Fischer, A.J., Allerman, A.A., Crawford, M.H., Bogart, K.H.A., Lee, S.R., Kaplar, R.J., Chow, W.W., Kurtz, S.R., Fullmer, K.W., Figiel, J.J.: Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels. Appl. Phys. Lett. 84, 3394–3396 (2004)ADSCrossRef
go back to reference Hu, J., Yang, L., Shin, M.W.: Mechanism and thermal effect of delamination in light-emitting diode packages. Microelectron. J. 38, 157–163 (2007)CrossRef Hu, J., Yang, L., Shin, M.W.: Mechanism and thermal effect of delamination in light-emitting diode packages. Microelectron. J. 38, 157–163 (2007)CrossRef
go back to reference Keppens, A., Ryckaert, W.R., Deconinck, G., Hanselaer, P.: Modeling high power light-emitting diode spectra and their variation with junction temperature. J. Appl. Phys. 108, 043104 (2010)ADSCrossRef Keppens, A., Ryckaert, W.R., Deconinck, G., Hanselaer, P.: Modeling high power light-emitting diode spectra and their variation with junction temperature. J. Appl. Phys. 108, 043104 (2010)ADSCrossRef
go back to reference Kim, D.S., Han, B.: Effect of junction temperature on heat dissipation of high power light emitting diodes. J. Appl. Phys. 119, 125104 (2016)ADSCrossRef Kim, D.S., Han, B.: Effect of junction temperature on heat dissipation of high power light emitting diodes. J. Appl. Phys. 119, 125104 (2016)ADSCrossRef
go back to reference Lee, Y.J., Lee, C.J., Chen, C.H.: Determination of junction temperature in InGaN and AlGaInP light-emitting diodes. IEEE J. Quantum Electron. 46, 1450–1455 (2010)ADSCrossRef Lee, Y.J., Lee, C.J., Chen, C.H.: Determination of junction temperature in InGaN and AlGaInP light-emitting diodes. IEEE J. Quantum Electron. 46, 1450–1455 (2010)ADSCrossRef
go back to reference Lee, H.K., Lee, D.H., Song, Y.M., Lee, Y.T., Yu, J.S.: Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses. Solid State Electron. 56, 79–84 (2011)ADSCrossRef Lee, H.K., Lee, D.H., Song, Y.M., Lee, Y.T., Yu, J.S.: Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses. Solid State Electron. 56, 79–84 (2011)ADSCrossRef
go back to reference Liu, D., Yang, H., Yang, P.: Experimental and numerical approach on junction temperature of high-power LED. Microelectron. Reliab. 54, 926–931 (2014)CrossRef Liu, D., Yang, H., Yang, P.: Experimental and numerical approach on junction temperature of high-power LED. Microelectron. Reliab. 54, 926–931 (2014)CrossRef
go back to reference Nepal, N., Li, J., Nakarmi, M.L., Lin, J.Y., Jianga, H.X.: Temperature and compositional dependence of the energy band gap of AlGaN alloys. Appl. Phys. Lett. 87, 242104 (2005)ADSCrossRef Nepal, N., Li, J., Nakarmi, M.L., Lin, J.Y., Jianga, H.X.: Temperature and compositional dependence of the energy band gap of AlGaN alloys. Appl. Phys. Lett. 87, 242104 (2005)ADSCrossRef
go back to reference Ochoa-Martínez, E., Barrutia, L., Ochoa, M., Barrigón, E., Carcía, I., Rey-Stolle, I., Algora, C., Basa, P., Kronome, G., Gabás, M.: Refractive indexes and extinction coefficients of n-and p-type doped GaInP, AlInP and AlGaInP for multi junction solar cells. Sol. Energy Mater. Sol. Cells 174, 388–396 (2018)CrossRef Ochoa-Martínez, E., Barrutia, L., Ochoa, M., Barrigón, E., Carcía, I., Rey-Stolle, I., Algora, C., Basa, P., Kronome, G., Gabás, M.: Refractive indexes and extinction coefficients of n-and p-type doped GaInP, AlInP and AlGaInP for multi junction solar cells. Sol. Energy Mater. Sol. Cells 174, 388–396 (2018)CrossRef
go back to reference Ozuturk, E.: Voltage–current characteristic of LED according to some optical and thermal parameters at pulsed high currents. Optik Int. J. Light Electron Opt. 126, 3215–3217 (2015)CrossRef Ozuturk, E.: Voltage–current characteristic of LED according to some optical and thermal parameters at pulsed high currents. Optik Int. J. Light Electron Opt. 126, 3215–3217 (2015)CrossRef
go back to reference Xi, Y., Schubert, E.F.: Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Int. J. High Speed Electron. Syst. 14, 708–713 (2004)CrossRef Xi, Y., Schubert, E.F.: Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Int. J. High Speed Electron. Syst. 14, 708–713 (2004)CrossRef
go back to reference Xi, Y., Xi, J.Q., Gessmann, Th, Shah, J.M., Kim, J.K., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods. Appl. Phys. Lett. 86, 031907 (2005a)ADSCrossRef Xi, Y., Xi, J.Q., Gessmann, Th, Shah, J.M., Kim, J.K., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods. Appl. Phys. Lett. 86, 031907 (2005a)ADSCrossRef
go back to reference Xi, Y., Gessmann, Th, Xi, J.Q., Kim, J.K., Shah, J.M., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction temperature in ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 44, 7260–7266 (2005b)ADSCrossRef Xi, Y., Gessmann, Th, Xi, J.Q., Kim, J.K., Shah, J.M., Schubert, E.F., Fischer, A.J., Crawford, M.H., Bogart, K.H.A., Allerman, A.A.: Junction temperature in ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 44, 7260–7266 (2005b)ADSCrossRef
go back to reference Ye, P.D., Yang, B., Ng, K.K., Bude, J., Wilk, G.D., Halder, S., Hwang, J.C.M.: GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Appl. Phys. Lett. 86, 063501 (2005)ADSCrossRef Ye, P.D., Yang, B., Ng, K.K., Bude, J., Wilk, G.D., Halder, S., Hwang, J.C.M.: GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Appl. Phys. Lett. 86, 063501 (2005)ADSCrossRef
go back to reference Yung, K.C., Liem, H., Choy, H.S., Cai, Z.X.: Thermal investigation of a high brightness LED array package assembly for various placement algorithms. Appl. Therm. Eng. 63, 105–118 (2014)CrossRef Yung, K.C., Liem, H., Choy, H.S., Cai, Z.X.: Thermal investigation of a high brightness LED array package assembly for various placement algorithms. Appl. Therm. Eng. 63, 105–118 (2014)CrossRef
Metadata
Title
Determining junction temperature based on material properties and geometric structures of LEDs
Authors
Ching-Yen Ho
Song-Feng Wan
Bor-Chyuan Chen
Long-Gen Li
Si-Li Fan
Chang-Wei Xiong
Publication date
01-11-2018
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 11/2018
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-018-1663-1

Other articles of this Issue 11/2018

Optical and Quantum Electronics 11/2018 Go to the issue