Advertisement
Published in:
01-07-2007
Dielectric behavior of Cu–GeO2 cermet thin films
Published in: Journal of Materials Science | Issue 14/2007
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
Capacitance and dielectric loss measurements were carried out using an Al/Cu–GeO2/Al sandwich structure for 0 to 10 vol% Cu films, 120–400 nm thick, deposited at 0.4–1.5 nm/s in the frequency and temperature range 1–106 Hz and 90–573 K, respectively. The variation of capacitance and dielectric loss with frequency and temperature follows the Goswami and Goswami model. Capacitance decreases slowly with increasing thickness and also varies with the change in deposition rate of the cermet film.