13. Dilute Bismide Photodetectors

Dilute bismide III-V semiconductors have many unique properties and have been extensively investigated in recent decades. As the development of material research has progressed, some promising dilute bismide devices have been explored. Incorporation of a small amount of Bi in III-V host materials results in a large band-gap narrowing, which makes dilute bismides potential candidates in long-wavelength photodetectors. In this chapter, we review recent progress on GaAsBi, InAsBi, InSbBi, and InGaAsBi photodetectors, as well as GaAsBi and InGaAsBi THz photoconductive detectors. Some preliminary demonstrations and detector properties have been reported on these dilute bismide photodetectors, while the material quality still needs to be improved and the specific detector properties of dilute bismides still need more understanding.