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Semiconductors
Published in: Semiconductors 11/2016

01-11-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Authors: A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Published in: Semiconductors | Issue 11/2016

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Metadata
Title
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence
Authors
A. N. Kosarev
V. V. Chaldyshev
V. V. Preobrazhenskii
M. A. Putyato
B. R. Semyagin
Publication date
01-11-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616110154

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