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Semiconductors
Published in: Semiconductors 5/2009

01-05-2009 | Semiconductor Structures, Interfaces, and Surfaces

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC

Authors: A. S. Potapov, P. A. Ivanov, T. P. Samsonova

Published in: Semiconductors | Issue 5/2009

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previous article Structure and properties of Cd x Hg1−x Te-metal contacts
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Metadata
Title
Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4H-SiC
Authors
A. S. Potapov
P. A. Ivanov
T. P. Samsonova
Publication date
01-05-2009
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 5/2009
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782609050145

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