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Published in: Technical Physics 11/2018

01-11-2018 | PHYSICAL SCIENCE OF MATERIALS

Electric Properties of Nanocomposite Films Based on Amorphous Hydrogenated Carbon

Authors: G. A. Nikolaichuk, O. Yu. Moroz, S. M. Dunaevskii

Published in: Technical Physics | Issue 11/2018

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Abstract

We report on the investigation results of electric properties of amorphous hydrogenated carbon with nickel nanoparticles, a-C : H(Ni) on glassceramic substrates. The films are synthesized by reactive ion-plasma magnetron sputtering. The analysis results of the effect of nickel (Ni) concentration in dc conductivity σ and the values of complex permittivity ε* in the frequency range 8–12 GHz are considered. The real part ε' of the complex permittivity of samples reaches 100, while the imaginary part ε'' attains 212. The nickel concentration in the films corresponding to the percolation threshold amounts to 22–25 at %.

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Literature
2.
go back to reference P. Koidl, C. Wild, B. Dischler, J. Wagner, and M. Ramsteiner, Mater. Sci. Forum 52–53, 41 (1990). doi 10.4028/www.scientific.net/MSF.52-53.41 P. Koidl, C. Wild, B. Dischler, J. Wagner, and M. Ramsteiner, Mater. Sci. Forum 5253, 41 (1990). doi 10.4028/www.scientific.net/MSF.52-53.41
3.
go back to reference J. W. Zou, K. Reichelt, K. Schmidt, and B. Dischler, J. Appl. Phys. 65, 3914 (1989). doi 10.1063/1.343355ADSCrossRef J. W. Zou, K. Reichelt, K. Schmidt, and B. Dischler, J. Appl. Phys. 65, 3914 (1989). doi 10.1063/1.343355ADSCrossRef
4.
go back to reference S. Kaplan, F. Jansen, and M. Machonkin, Appl. Phys. Lett. 47, 750 (1985). doi 10.1063/1.96027ADSCrossRef S. Kaplan, F. Jansen, and M. Machonkin, Appl. Phys. Lett. 47, 750 (1985). doi 10.1063/1.96027ADSCrossRef
5.
go back to reference A. Grill, B. S. Meyerson, V. V. Patel, A. Reimer, and M. A. Petrich, J. Appl. Phys. 61, 2874 (1987). doi 10.1063/1.337883ADSCrossRef A. Grill, B. S. Meyerson, V. V. Patel, A. Reimer, and M. A. Petrich, J. Appl. Phys. 61, 2874 (1987). doi 10.1063/1.337883ADSCrossRef
6.
go back to reference V. I. Ivanov-Omskii, A. V. Tolmatchev, and S. G. Yastrebov, Semiconductors 35, 220 (2001). doi 10.1134/1.1349936ADSCrossRef V. I. Ivanov-Omskii, A. V. Tolmatchev, and S. G. Yastrebov, Semiconductors 35, 220 (2001). doi 10.1134/1.1349936ADSCrossRef
7.
go back to reference C. Jäger, J. Gottwald, H. W. Spiess, and R. J. Newport, Phys. Rev. B 50, 846 (1994). doi 10.1103/PhysRevB.50.846ADSCrossRef C. Jäger, J. Gottwald, H. W. Spiess, and R. J. Newport, Phys. Rev. B 50, 846 (1994). doi 10.1103/PhysRevB.50.846ADSCrossRef
8.
go back to reference J. Robertson and E. P. O’Reilly, Phys. Rev. B 35, 2946 (1987). doi 10.1103/PhysRevB.35.2946ADSCrossRef J. Robertson and E. P. O’Reilly, Phys. Rev. B 35, 2946 (1987). doi 10.1103/PhysRevB.35.2946ADSCrossRef
9.
go back to reference A. V. Vasin, L. A. Matveeva, and A. M. Kutsai, Tech. Phys. Lett. 25, 1006 (1999). doi 10.1134/1.1262714ADSCrossRef A. V. Vasin, L. A. Matveeva, and A. M. Kutsai, Tech. Phys. Lett. 25, 1006 (1999). doi 10.1134/1.1262714ADSCrossRef
10.
go back to reference A. Khurshudov, K. Kato, and S. Daisuke, J. Vac. Sci. Technol. A 14, 2935 (1996). doi 10.1116/1.580247ADSCrossRef A. Khurshudov, K. Kato, and S. Daisuke, J. Vac. Sci. Technol. A 14, 2935 (1996). doi 10.1116/1.580247ADSCrossRef
11.
go back to reference Q. Wei, R. J. Narayan, A. K. Sharma, J. Sankar, and J. Narayan, J. Vac. Sci. Technol. A 17, 3406 (1999). doi 10.1116/1.582074ADSCrossRef Q. Wei, R. J. Narayan, A. K. Sharma, J. Sankar, and J. Narayan, J. Vac. Sci. Technol. A 17, 3406 (1999). doi 10.1116/1.582074ADSCrossRef
12.
go back to reference H. Dimigen and C. P. Klages, Surf. Coat. Technol. 49, 543 (1991). doi 10.1016/0257-8972(91)90114-CCrossRef H. Dimigen and C. P. Klages, Surf. Coat. Technol. 49, 543 (1991). doi 10.1016/0257-8972(91)90114-CCrossRef
13.
go back to reference X. M. He, M. Hakovirta, and M. Nastasi, Mater. Lett. 59, 1417 (2005). doi 10.1016/j.matlet.2004.11.059CrossRef X. M. He, M. Hakovirta, and M. Nastasi, Mater. Lett. 59, 1417 (2005). doi 10.1016/j.matlet.2004.11.059CrossRef
14.
go back to reference J. C. Damasceno, S. S. Camargo, F. L. Freire, and R. Carius, Surf. Coat. Technol. 133–134, 247 (2000). doi 10.1016/S0257-8972(00)00932-4 J. C. Damasceno, S. S. Camargo, F. L. Freire, and R. Carius, Surf. Coat. Technol. 133134, 247 (2000). doi 10.1016/S0257-8972(00)00932-4
15.
go back to reference R. Gampp, P. Gantenbein, Y. Kuster, P. Reimann, R. Steiner, P. Oelhafen, S. Brunold, U. Frei, A. Gombert, R. Joerger, W. Graf, and M. Koehl, Proc. SPIE 2255, 92 (1994). doi 10.1117/12.185360ADSCrossRef R. Gampp, P. Gantenbein, Y. Kuster, P. Reimann, R. Steiner, P. Oelhafen, S. Brunold, U. Frei, A. Gombert, R. Joerger, W. Graf, and M. Koehl, Proc. SPIE 2255, 92 (1994). doi 10.1117/12.185360ADSCrossRef
16.
go back to reference C. Donnet, J. Fontaine, A. Grill, V. Patel, C. Jahnes, and M. Belin, Surf. Coat. Technol. 94–95, 531 (1997). doi 10.1016/S0257-8972(97)00462-3 C. Donnet, J. Fontaine, A. Grill, V. Patel, C. Jahnes, and M. Belin, Surf. Coat. Technol. 9495, 531 (1997). doi 10.1016/S0257-8972(97)00462-3
17.
go back to reference M. Grischke, K. Bewilogua, K. Trojan, and H. Dimigen, Surf. Coat. Technol. 74–75, 739 (1996). doi 10.1016/0257-8972(94)08201-4 M. Grischke, K. Bewilogua, K. Trojan, and H. Dimigen, Surf. Coat. Technol. 7475, 739 (1996). doi 10.1016/0257-8972(94)08201-4
18.
go back to reference Q. Wei, J. Sankar, and J. Narayan, Surf. Coat. Technol. 146–147, 250 (2001). doi 10.1016/S0257-8972(01)01394-9 Q. Wei, J. Sankar, and J. Narayan, Surf. Coat. Technol. 146147, 250 (2001). doi 10.1016/S0257-8972(01)01394-9
19.
go back to reference L. V. Lutsev, T. K. Zvonareva, and V. M. Lebedev, Tech. Phys. Lett. 27, 659 (2001). doi 10.1134/1.1398960ADSCrossRef L. V. Lutsev, T. K. Zvonareva, and V. M. Lebedev, Tech. Phys. Lett. 27, 659 (2001). doi 10.1134/1.1398960ADSCrossRef
20.
go back to reference L. V. Lutsev, S. V. Yakovlev, and V. I. Siklitskii, Phys. Solid State 42, 1139 (2000). doi 10.1134/1.1131330ADSCrossRef L. V. Lutsev, S. V. Yakovlev, and V. I. Siklitskii, Phys. Solid State 42, 1139 (2000). doi 10.1134/1.1131330ADSCrossRef
21.
go back to reference O. Yu. Moroz and E. Yu. Nakvasina, Proc. XII All-Russian School-Seminar “Wave Phenomena in Inhomogeneous Media,” Zvenigorod, Russia, 2010, Vol. 7, p. 57. O. Yu. Moroz and E. Yu. Nakvasina, Proc. XII All-Russian School-Seminar “Wave Phenomena in Inhomogeneous Media,” Zvenigorod, Russia, 2010, Vol. 7, p. 57.
22.
go back to reference G. A. Nikolaychuk, S. V. Yakovlev, O. Y. Moroz, and E. Y. Nakvasina, Proc. 13th Int. Conf. on Electromechanics, Electrotechnology, Electromaterials and Components, Alushta, Ukraine, 2010, Vol. 4, p. 46. G. A. Nikolaychuk, S. V. Yakovlev, O. Y. Moroz, and E. Y. Nakvasina, Proc. 13th Int. Conf. on Electromechanics, Electrotechnology, Electromaterials and Components, Alushta, Ukraine, 2010, Vol. 4, p. 46.
23.
go back to reference G. A. Nikolaychuk, S. V. Yakovlev, L. V. Lutsev, V. V. Petrov, O. Y. Moroz, E. A. Tsvetkova, E. Yu. Nakvasina, and S. A. Trifonov, Proc. 18th Int. Crimean Conf.—Microwave & Telecommunication Technology, Sevastopol, Ukraine, 2008, p. 579. doi 10.1109/CRMICO.2008.4676511 G. A. Nikolaychuk, S. V. Yakovlev, L. V. Lutsev, V. V. Petrov, O. Y. Moroz, E. A. Tsvetkova, E. Yu. Nakvasina, and S. A. Trifonov, Proc. 18th Int. Crimean Conf.—Microwave & Telecommunication Technology, Sevastopol, Ukraine, 2008, p. 579. doi 10.1109/CRMICO.2008.4676511
24.
go back to reference A. L. Efros, Physics and Geometry of Disorder (Nauka, Moscow, 1982). A. L. Efros, Physics and Geometry of Disorder (Nauka, Moscow, 1982).
25.
go back to reference V. I. Smirnov, Nondestructive Methods for Monitoring the Parameters of Semiconductor Materials and Structures (Ul’yanovsk. Gos. Tekh. Univ., Ul’yanovsk, 2012). V. I. Smirnov, Nondestructive Methods for Monitoring the Parameters of Semiconductor Materials and Structures (Ul’yanovsk. Gos. Tekh. Univ., Ul’yanovsk, 2012).
26.
go back to reference J. Baker-Jarvis, Transmission/Reflection and Short-Circuit Line Permittivity Measurements (National Institute of Standards and Technology, Colorado, 1990). J. Baker-Jarvis, Transmission/Reflection and Short-Circuit Line Permittivity Measurements (National Institute of Standards and Technology, Colorado, 1990).
27.
go back to reference A. M. Nicholson and G. F. Ross, IEEE Trans. Instrum. Meas. 4, 377 (1970). doi 10.1109/TIM.1970.4313932CrossRef A. M. Nicholson and G. F. Ross, IEEE Trans. Instrum. Meas. 4, 377 (1970). doi 10.1109/TIM.1970.4313932CrossRef
28.
29.
go back to reference P. G. Bartley and S. B. Begley, Proc. IEEE Instrumentation & Measurement Technology Conf., Austin, United States, 2010, p. 54. doi 10.1109/IMTC.2010.5488184 P. G. Bartley and S. B. Begley, Proc. IEEE Instrumentation & Measurement Technology Conf., Austin, United States, 2010, p. 54. doi 10.1109/IMTC.2010.5488184
30.
go back to reference I. S. Kovalev, Strip-Line Device Engineering (Sov. Radio, Moscow, 1974). I. S. Kovalev, Strip-Line Device Engineering (Sov. Radio, Moscow, 1974).
32.
go back to reference V. I. Ivanov-Omskii and G. S. Frolova, Tech. Phys. 40, 966 (1995). V. I. Ivanov-Omskii and G. S. Frolova, Tech. Phys. 40, 966 (1995).
33.
go back to reference B. Hallouet, B. Wetzel, and R. Pelster, J. Nanomater. 2007, 34527 (2007). doi 10.1155/2007/34527 B. Hallouet, B. Wetzel, and R. Pelster, J. Nanomater. 2007, 34527 (2007). doi 10.1155/2007/34527
34.
go back to reference R. Pelster and U. Simon, Colloid Polym. Sci. 227, 2 (1999). doi 10.1007/s003960050CrossRef R. Pelster and U. Simon, Colloid Polym. Sci. 227, 2 (1999). doi 10.1007/s003960050CrossRef
35.
36.
go back to reference Y. Du, M. Xu, J. Wu, Y. Shi, and H. Lu, J. Appl. Phys. 70, 5903 (1991). doi 10.1063/1.3501ADSCrossRef Y. Du, M. Xu, J. Wu, Y. Shi, and H. Lu, J. Appl. Phys. 70, 5903 (1991). doi 10.1063/1.3501ADSCrossRef
Metadata
Title
Electric Properties of Nanocomposite Films Based on Amorphous Hydrogenated Carbon
Authors
G. A. Nikolaichuk
O. Yu. Moroz
S. M. Dunaevskii
Publication date
01-11-2018
Publisher
Pleiades Publishing
Published in
Technical Physics / Issue 11/2018
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI
https://doi.org/10.1134/S1063784218110208

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