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Semiconductors
Published in: Semiconductors 1/2003

01-01-2003 | Amorphous, Vitreous, and Porous Semiconductors

Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation

Authors: O. V. Naumova, I. V. Antonova, V. P. Popov, V. F. Stas’

Published in: Semiconductors | Issue 1/2003

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previous article Influence of charged defects on detection of electron spin resonance in vitreous chalcogenide semiconductors
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Metadata
Title
Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation
Authors
O. V. Naumova
I. V. Antonova
V. P. Popov
V. F. Stas’
Publication date
01-01-2003
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2003
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1538545

Other articles of this Issue 1/2003

Semiconductors 1/2003 Go to the issue

Electronic and Optical Properties of Semiconductors

Influence of electronic (charge) state of E traps on their introduction rate in irradiated n-GaAs

Amorphous, Vitreous, and Porous Semiconductors

Influence of charged defects on detection of electron spin resonance in vitreous chalcogenide semiconductors

Semiconductor Structures, Interfaces, and Surfaces

Effect of thermal annealing of radiation defects on the noise characteristics of silicon p-n structures with a thin multiplication region

Amorphous, Vitreous, and Porous Semiconductors

The influence of hydrogen plasma on the electroreflectance spectrum and the spectrum of electron states of porous silicon

Semiconductor Structures, Interfaces, and Surfaces

Optical transparency of macroporous silicon with through pores

Semiconductor Structures, Interfaces, and Surfaces

Photoelectric properties of heterojunctions between silicon and polyhomoconjugated organometallic compounds

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