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2020 | OriginalPaper | Chapter

Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films

Authors : T. Potlog, I. Lungu, S. Raevschi, V. Botnariuc, S. Robu, S. Worasawat, H. Mimura

Published in: 4th International Conference on Nanotechnologies and Biomedical Engineering

Publisher: Springer International Publishing

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Abstract

Al-doped ZnO thin films have been prepared by spray pyrolysis, which facilitates the incorporation of a higher percentage of dopant atoms. The vacuum thermally annealed at 420 °C temperature thin films have been characterized by X-ray diffraction (XRD), optical spectroscopy. Electrical conductivity and the Hall effect are investigated in the temperature interval (77–300) K. X-ray analysis results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. Different characters of the temperature dependence of conductibility are observed in the Al-doped ZnO films vacuum thermally annealed at 420 °C temperature. In all cases, the conductivity, mobility carriers and carriers’ concentration of ZnO thin films obtained under Ar are higher than under O2 atmosphere, unless they are not doped. of your paper no longer than 300 words.

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Metadata
Title
Electrical Properties of Thermal Annealed in Vacuum Spray Deposited Al-Doped ZnO Thin Films
Authors
T. Potlog
I. Lungu
S. Raevschi
V. Botnariuc
S. Robu
S. Worasawat
H. Mimura
Copyright Year
2020
DOI
https://doi.org/10.1007/978-3-030-31866-6_18