Skip to main content
Top
Published in: Technical Physics 5/2019

01-05-2019 | PHYSICAL ELECTRONICS

Electronic and Optical Properties of NiSi2/Si Nanofilms

Authors: B. E. Umirzakov, D. A. Tashmukhamedova, A. K. Tashatov, N. M. Mustafoeva

Published in: Technical Physics | Issue 5/2019

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi2/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi2 films start to set in at d = 5.0–6.0 nm.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference A. A. Alekseev, D. A. Olyanich, T. V. Utas, V. G. Kotlyar, A. V. Zotov, and A. A. Saranin, Tech. Phys. 60, 1508 (2015).CrossRef A. A. Alekseev, D. A. Olyanich, T. V. Utas, V. G. Kotlyar, A. V. Zotov, and A. A. Saranin, Tech. Phys. 60, 1508 (2015).CrossRef
2.
go back to reference K. J. Kim, T.-H. Kang, K.-W. Kim, H.-J. Shin, and B. Kim, Appl. Surf. Sci. 161, 268 (2000).CrossRefADS K. J. Kim, T.-H. Kang, K.-W. Kim, H.-J. Shin, and B. Kim, Appl. Surf. Sci. 161, 268 (2000).CrossRefADS
3.
go back to reference U. Starke, J. Schardt, W. Weiß, G. Rangelov, T. H. Fauster, and K. Heinz, Surf. Rev. Lett. 5, 139 (1998).CrossRefADS U. Starke, J. Schardt, W. Weiß, G. Rangelov, T. H. Fauster, and K. Heinz, Surf. Rev. Lett. 5, 139 (1998).CrossRefADS
4.
go back to reference M. V. Gomoyunova, I. I. Pronin, N. R. Gall’, S. L. Molotsov, and D. V. Vyalykh, Phys. Solid State 45, 1596 (2003).CrossRefADS M. V. Gomoyunova, I. I. Pronin, N. R. Gall’, S. L. Molotsov, and D. V. Vyalykh, Phys. Solid State 45, 1596 (2003).CrossRefADS
5.
go back to reference J. P. Colinge, Mater. Res. Soc. Proc. 35, 653 (1985). http://dx.doi.org/doi10.1557/PROC-35-653. J. P. Colinge, Mater. Res. Soc. Proc. 35, 653 (1985). http://​dx.​doi.​org/​doi10.​1557/​PROC-35-653.​
6.
go back to reference A. A. Altukhov and V. V. Zhirnov, Proc. II All-Union Interdisciplinary Meeting “Thin Films in Electronics,” Izhevsk, Moscow, 1991, p. 15. A. A. Altukhov and V. V. Zhirnov, Proc. II All-Union Interdisciplinary Meeting “Thin Films in Electronics,” Izhevsk, Moscow, 1991, p. 15.
7.
go back to reference V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, and S. G. Simakin, Russ. Microelectron. 40, 389 (2011).CrossRef V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, and S. G. Simakin, Russ. Microelectron. 40, 389 (2011).CrossRef
8.
go back to reference D. M. Muradkabilov, D. A. Tashmukhamedova, and B. E. Umirzakov, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 7, 967 (2013).CrossRef D. M. Muradkabilov, D. A. Tashmukhamedova, and B. E. Umirzakov, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 7, 967 (2013).CrossRef
9.
go back to reference B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, and B. B. Mavlyanov, Tech. Phys. 58, 1383 (2013).CrossRef B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, A. K. Tashatov, S. B. Donaev, and B. B. Mavlyanov, Tech. Phys. 58, 1383 (2013).CrossRef
10.
go back to reference B. E. Umirzakov, T. S. Pugacheva, A. K. Tashatov, and D. A. Tashmukhamedova, Nucl. Instrum. Methods Phys. Res., Sect. B 166–167, 572 (2000). B. E. Umirzakov, T. S. Pugacheva, A. K. Tashatov, and D. A. Tashmukhamedova, Nucl. Instrum. Methods Phys. Res., Sect. B 166167, 572 (2000).
11.
go back to reference B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, and K. K. Boltaev, Tech. Phys. 58, 841 (2013).CrossRef B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, and K. K. Boltaev, Tech. Phys. 58, 841 (2013).CrossRef
12.
go back to reference G. V. Samsonov, L. A. Dvorina, and B. M. Rud’, Silicides (Metallurgiya, Moscow, 1979). G. V. Samsonov, L. A. Dvorina, and B. M. Rud’, Silicides (Metallurgiya, Moscow, 1979).
Metadata
Title
Electronic and Optical Properties of NiSi2/Si Nanofilms
Authors
B. E. Umirzakov
D. A. Tashmukhamedova
A. K. Tashatov
N. M. Mustafoeva
Publication date
01-05-2019
Publisher
Pleiades Publishing
Published in
Technical Physics / Issue 5/2019
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI
https://doi.org/10.1134/S1063784219050244

Other articles of this Issue 5/2019

Technical Physics 5/2019 Go to the issue

Premium Partners