Skip to main content
Top

2017 | OriginalPaper | Chapter

3. Electronic Devices Based on Atomically Thin Materials

Authors : Mircea Dragoman, Daniela Dragoman

Published in: 2D Nanoelectronics

Publisher: Springer International Publishing

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

This chapter is dedicated to electronic devices based on 2D materials. The chapter starts with transistors, which are the backbone of integrated circuits, and continues with more complex devices and circuits, such as sensors, integrated circuits, and memories. This research area is in its infancy since only flakes of 2D materials are used. Thus, only few devices can be integrated, and the reproducibility and scalability issues are still not solved. The electronic devices based on 2D materials have a long path ahead before reaching the performances of Si-based integrated circuits, which actually contain up to five billions transistors/chip.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literature
go back to reference Allain A, Kang J, Banerjee K, Kis A (2015) Electrical contacts to two-dimensional semiconductors. Nat Mater 14:1195–1205CrossRef Allain A, Kang J, Banerjee K, Kis A (2015) Electrical contacts to two-dimensional semiconductors. Nat Mater 14:1195–1205CrossRef
go back to reference Bertolazzi S, Krasnozhon D, Kis A (2013) Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7:3246–3252CrossRef Bertolazzi S, Krasnozhon D, Kis A (2013) Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7:3246–3252CrossRef
go back to reference Cao W, Kang J, Sarkar D, Liu W, Banerjee K (2015) 2D semiconductor FETs–Projections and design for sub-10 nm VLSI. IEEE Electron Dev 62:3459–3469CrossRef Cao W, Kang J, Sarkar D, Liu W, Banerjee K (2015) 2D semiconductor FETs–Projections and design for sub-10 nm VLSI. IEEE Electron Dev 62:3459–3469CrossRef
go back to reference Castellanos-Gomez A (2016) Why all the fuss about 2D semiconductors? Nat Photonics 10:202–204CrossRef Castellanos-Gomez A (2016) Why all the fuss about 2D semiconductors? Nat Photonics 10:202–204CrossRef
go back to reference Chang H-Y, Yang S, Lee J, Tao Li, Hwang W-S, Jena D, Lu N, Akinwande D (2013) High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. ACS Nano 7:5446–5452CrossRef Chang H-Y, Yang S, Lee J, Tao Li, Hwang W-S, Jena D, Lu N, Akinwande D (2013) High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. ACS Nano 7:5446–5452CrossRef
go back to reference Chakraborty C, Kinnischtzke L, Goodfellow KM, Beams R, Vamivakas AN (2015) Voltage-controlled quantum light from an atomically thin semiconductor. Nat Nanotechnol 10:507–511CrossRef Chakraborty C, Kinnischtzke L, Goodfellow KM, Beams R, Vamivakas AN (2015) Voltage-controlled quantum light from an atomically thin semiconductor. Nat Nanotechnol 10:507–511CrossRef
go back to reference Cheng R, Jiang S, Chen Y, Liu Y, Weiss N, Cheng H-C, Wu H, Huang Y, Duan X (2014) Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat Commun 5:5143CrossRef Cheng R, Jiang S, Chen Y, Liu Y, Weiss N, Cheng H-C, Wu H, Huang Y, Duan X (2014) Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat Commun 5:5143CrossRef
go back to reference Cheng P, Sun K, Hu YH (2016) Memristive behavior and ideal memristor of 1T phase MoS2 nanosheets. Nano Lett 16:572–576CrossRef Cheng P, Sun K, Hu YH (2016) Memristive behavior and ideal memristor of 1T phase MoS2 nanosheets. Nano Lett 16:572–576CrossRef
go back to reference Chua L (2014) If it’s pinched it’s a memristor. In: Tetzlaff R (ed) Memristors and memristive systems. Springer, pp 17–90 Chua L (2014) If it’s pinched it’s a memristor. In: Tetzlaff R (ed) Memristors and memristive systems. Springer, pp 17–90
go back to reference Das S, Chen H-Y, Penumatcha AV, Appenzeller A (2013) High performance multilayer MoS2 transistors with scandium contacts. Nano Lett 13:100–105CrossRef Das S, Chen H-Y, Penumatcha AV, Appenzeller A (2013) High performance multilayer MoS2 transistors with scandium contacts. Nano Lett 13:100–105CrossRef
go back to reference Dragoman M, Cismaru A, Aldrigo M, Radoi A, Dinescu A, Dragoman D (2015) MoS2 thin films as electrically tunable materials for microwave applications. Appl Phys Lett 107:243109CrossRef Dragoman M, Cismaru A, Aldrigo M, Radoi A, Dinescu A, Dragoman D (2015) MoS2 thin films as electrically tunable materials for microwave applications. Appl Phys Lett 107:243109CrossRef
go back to reference Du Y, Liu H, Deng Y, Ye PD (2014) Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. ACS Nano 10:10035–10042CrossRef Du Y, Liu H, Deng Y, Ye PD (2014) Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling. ACS Nano 10:10035–10042CrossRef
go back to reference Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A (2014) Exfoliated multilayer MoTe2 field-effect transistors. Appl Phys Lett 105:192101CrossRef Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A (2014) Exfoliated multilayer MoTe2 field-effect transistors. Appl Phys Lett 105:192101CrossRef
go back to reference Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV, Kim Y-J, Gholinia A, Haigh SJ, Makarovsky O, Eaves L, Ponomarenko LA, Geim AK, Novoselov KS, Mishchenko A (2012) Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol 8:100–103CrossRef Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV, Kim Y-J, Gholinia A, Haigh SJ, Makarovsky O, Eaves L, Ponomarenko LA, Geim AK, Novoselov KS, Mishchenko A (2012) Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol 8:100–103CrossRef
go back to reference Jacobs-Gedrim RB, Shanmugam M, Jain N, Durcan CA, Murphy MT, Murray TM, Matyi RJ, Moore RL II, Yu B (2014) Extraordinary photoresponse in two-dimensional In2Se3 nanosheets. ACS Nano 8:514–521CrossRef Jacobs-Gedrim RB, Shanmugam M, Jain N, Durcan CA, Murphy MT, Murray TM, Matyi RJ, Moore RL II, Yu B (2014) Extraordinary photoresponse in two-dimensional In2Se3 nanosheets. ACS Nano 8:514–521CrossRef
go back to reference Jo SH, Chang T, Ebong I, Bhadviya BB, Mazumder P, Lu W (2010) Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett 10:1297–1301CrossRef Jo SH, Chang T, Ebong I, Bhadviya BB, Mazumder P, Lu W (2010) Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett 10:1297–1301CrossRef
go back to reference He Y-M, Clark G, Schaibley JR, He Y, Chen M-C, Wei Y-J, Ding X, Zhang Q, Yao W, Xu X, Lu C-Y, Pan J-W (2015) Single quantum emitters in monolayer semiconductors. Nat Nanotechnol 10:497–502CrossRef He Y-M, Clark G, Schaibley JR, He Y, Chen M-C, Wei Y-J, Ding X, Zhang Q, Yao W, Xu X, Lu C-Y, Pan J-W (2015) Single quantum emitters in monolayer semiconductors. Nat Nanotechnol 10:497–502CrossRef
go back to reference Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Zhao P, Konar A, Xing H, Seabaugh A, Jena D (2012) Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Appl Phys Lett 101:013107CrossRef Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Zhao P, Konar A, Xing H, Seabaugh A, Jena D (2012) Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Appl Phys Lett 101:013107CrossRef
go back to reference Kang M, Rathi S, Lee I, Lim D, Wang J, Li L, Atif Khan M, Kim G-H (2015) Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate. Appl Phys Lett 106:143108CrossRef Kang M, Rathi S, Lee I, Lim D, Wang J, Li L, Atif Khan M, Kim G-H (2015) Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate. Appl Phys Lett 106:143108CrossRef
go back to reference Kim S, Konar A, Hwang W-S, Lee JH, Lee J, Yang J, Jung CC, Kim H, Yoo J-B, Choi J-Y, Jin YW, Lee SY, Jena D, Choi W, Kim K (2012) High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat Commun 3:1011CrossRef Kim S, Konar A, Hwang W-S, Lee JH, Lee J, Yang J, Jung CC, Kim H, Yoo J-B, Choi J-Y, Jin YW, Lee SY, Jena D, Choi W, Kim K (2012) High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat Commun 3:1011CrossRef
go back to reference Koperski M, Nogajewski K, Arora A, Cherkez V, Mallet P, Veuillen J-Y, Marcus J, Kossacki P, Potemski M (2015) Single photon emitters in exfoliated WSe2 structures. Nat Nanotechnol 10:503–506CrossRef Koperski M, Nogajewski K, Arora A, Cherkez V, Mallet P, Veuillen J-Y, Marcus J, Kossacki P, Potemski M (2015) Single photon emitters in exfoliated WSe2 structures. Nat Nanotechnol 10:503–506CrossRef
go back to reference Kozma R, Pino RE, Pazienza GE (2012) Advances in neuromorphic memristor science and applications. Springer, DordrechtCrossRef Kozma R, Pino RE, Pazienza GE (2012) Advances in neuromorphic memristor science and applications. Springer, DordrechtCrossRef
go back to reference Krasnozhon D, Lembke D, Nyffeler C, Leblebici Y, Kis A (2014) MoS2 transistors operating at gigahertz frequencies. Nano Lett 14:5905–5911CrossRef Krasnozhon D, Lembke D, Nyffeler C, Leblebici Y, Kis A (2014) MoS2 transistors operating at gigahertz frequencies. Nano Lett 14:5905–5911CrossRef
go back to reference Larentis S, Fallahazad B, Tatuc E (2012) Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett 101:223104CrossRef Larentis S, Fallahazad B, Tatuc E (2012) Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett 101:223104CrossRef
go back to reference Lee S, Zhong Z (2014) Nanoelectronic circuits based on two-dimensional atomic layer crystals. Nanoscale 6:13283–13300CrossRef Lee S, Zhong Z (2014) Nanoelectronic circuits based on two-dimensional atomic layer crystals. Nanoscale 6:13283–13300CrossRef
go back to reference Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y (2014) Black-phosphorous field-effect transistors. Nat Nanotechnol 9:372–377CrossRef Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y (2014) Black-phosphorous field-effect transistors. Nat Nanotechnol 9:372–377CrossRef
go back to reference Lin Y-C, Ghosh RK, Addou R, Lu N, Eichfeld SM, Zhu H, Li M-Y, Peng X, Kim MJ, Li L-J, Wallace RM, Datta S, Robinson JA (2015) Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nat Commun 6:7311CrossRef Lin Y-C, Ghosh RK, Addou R, Lu N, Eichfeld SM, Zhu H, Li M-Y, Peng X, Kim MJ, Li L-J, Wallace RM, Datta S, Robinson JA (2015) Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nat Commun 6:7311CrossRef
go back to reference Liu H, Ye PD (2012) MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Dev Lett 33:546–548CrossRef Liu H, Ye PD (2012) MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Dev Lett 33:546–548CrossRef
go back to reference Liu F, Shimotani H, Shang H, Kanagasekaran T, Zolyomi V, Drummond N, Fal’ko VI, Tanigaki K (2014a) High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano 8:752–760CrossRef Liu F, Shimotani H, Shang H, Kanagasekaran T, Zolyomi V, Drummond N, Fal’ko VI, Tanigaki K (2014a) High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano 8:752–760CrossRef
go back to reference Liu X, Hu J, Yue C, Della Fera N, Ling Y, Mao Z, Wei J (2014b) High performance field-effect transistor based on multilayer tungsten disulfide. ACS Nano 8:10396–10402CrossRef Liu X, Hu J, Yue C, Della Fera N, Ling Y, Mao Z, Wei J (2014b) High performance field-effect transistor based on multilayer tungsten disulfide. ACS Nano 8:10396–10402CrossRef
go back to reference Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–501CrossRef Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–501CrossRef
go back to reference Mak KF, Shan J (2016) Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photonics 10:216–226CrossRef Mak KF, Shan J (2016) Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photonics 10:216–226CrossRef
go back to reference Miao J, Zhang S, Cai L, Scherr M, Wang C (2015) Ultrashort channel length black phosphorous field-effect transistors. ACS Nano 9:9236–9243CrossRef Miao J, Zhang S, Cai L, Scherr M, Wang C (2015) Ultrashort channel length black phosphorous field-effect transistors. ACS Nano 9:9236–9243CrossRef
go back to reference Mei X, Yoshida W, Lange M, Lee J, Zhou J, Liu P-H, Leong K, Zamora A, Padilla J, Sarkozy S, Lai R, Deal WR (2015) First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Dev 36:327–329CrossRef Mei X, Yoshida W, Lange M, Lee J, Zhou J, Liu P-H, Leong K, Zamora A, Padilla J, Sarkozy S, Lai R, Deal WR (2015) First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process. IEEE Electron Dev 36:327–329CrossRef
go back to reference Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:147–150CrossRef Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:147–150CrossRef
go back to reference Roy T, Tosun M, Cao X, Fang H, Lien D-H, Zhao P, Chen Y-Z, Chueh Y-L, Guo J, Javey A (2015) Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano 9:2071–2079CrossRef Roy T, Tosun M, Cao X, Fang H, Lien D-H, Zhao P, Chen Y-Z, Chueh Y-L, Guo J, Javey A (2015) Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano 9:2071–2079CrossRef
go back to reference Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S (2015) Radio frequency transistors and circuits based on CVD MoS2. Nano Lett 15:5039–5045CrossRef Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S (2015) Radio frequency transistors and circuits based on CVD MoS2. Nano Lett 15:5039–5045CrossRef
go back to reference Sangwan VK, Jariwala D, Kim IS, Chen K-S, Marks TJ, Lauhon LJ, Hersam MC (2015) Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nat Nanotechnol 10:403–406CrossRef Sangwan VK, Jariwala D, Kim IS, Chen K-S, Marks TJ, Lauhon LJ, Hersam MC (2015) Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nat Nanotechnol 10:403–406CrossRef
go back to reference Schwierz F, Pezoldt J, Granzner G (2015) Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7:8261–8283CrossRef Schwierz F, Pezoldt J, Granzner G (2015) Two-dimensional materials and their prospects in transistor electronics. Nanoscale 7:8261–8283CrossRef
go back to reference Strukov DB, Snider GS, Stewart DR, Williams RS (2008) The missing memristor found. Nature 453:80–83CrossRef Strukov DB, Snider GS, Stewart DR, Williams RS (2008) The missing memristor found. Nature 453:80–83CrossRef
go back to reference Sylvia SS, Park H-H, Khayer MA, Alam K, Klimeck G, Lake RK (2012) Material selection for minimizing direct tunneling in nanowires transistors. IEEE Electron Devices 59:2064–2069CrossRef Sylvia SS, Park H-H, Khayer MA, Alam K, Klimeck G, Lake RK (2012) Material selection for minimizing direct tunneling in nanowires transistors. IEEE Electron Devices 59:2064–2069CrossRef
go back to reference Tao L, Cinquanta E, Chiappe D, Grazzianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D (2015) Silicene field-effect transistors operating at room temperature. Nat Nanotechnol 10:227–231CrossRef Tao L, Cinquanta E, Chiappe D, Grazzianetti C, Fanciulli M, Dubey M, Molle A, Akinwande D (2015) Silicene field-effect transistors operating at room temperature. Nat Nanotechnol 10:227–231CrossRef
go back to reference Viti L, Hu J, Coquillat D, Politano A, Knapp W, Vitiello MS (2016) Efficient terahertz detection in black-phosphorous nano-transistors with selective and controllable plasma-waves, bolometric and thermoelectric response. Sci Reports 6:20474CrossRef Viti L, Hu J, Coquillat D, Politano A, Knapp W, Vitiello MS (2016) Efficient terahertz detection in black-phosphorous nano-transistors with selective and controllable plasma-waves, bolometric and thermoelectric response. Sci Reports 6:20474CrossRef
go back to reference Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han S (2014) Black phosphorous radio-frequency transistors. Nano Lett 14:6424–6429CrossRef Wang H, Wang X, Xia F, Wang L, Jiang H, Xia Q, Chin ML, Dubey M, Han S (2014) Black phosphorous radio-frequency transistors. Nano Lett 14:6424–6429CrossRef
go back to reference Wu S, Buckley S, Schaibley JR, Feng L, Yan J, Mandrus DG, Hatami F, Yao W, Vuckovic J, Majumdar A, Xu X (2015) Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature 520:69–72CrossRef Wu S, Buckley S, Schaibley JR, Feng L, Yan J, Mandrus DG, Hatami F, Yao W, Vuckovic J, Majumdar A, Xu X (2015) Monolayer semiconductor nanocavity lasers with ultralow thresholds. Nature 520:69–72CrossRef
go back to reference Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG (2015) Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Lett 15:5791–5798CrossRef Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG (2015) Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Lett 15:5791–5798CrossRef
go back to reference Yang J, Wang Z, Wang F, Xu R, Tao J, Zhang S, Qin Q, Luther-Davies B, Jagadish C, Yu Z, Lu Y (2016) Atomically thin optical lenses and gratings. Light: Sci Appl 5:e16046 Yang J, Wang Z, Wang F, Xu R, Tao J, Zhang S, Qin Q, Luther-Davies B, Jagadish C, Yu Z, Lu Y (2016) Atomically thin optical lenses and gratings. Light: Sci Appl 5:e16046
go back to reference Yu WJ, Liu Y, Zhou H, Yin A, Li Z, Huang Y, Duan X (2013) Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat Nanotechnol 8:952–958CrossRef Yu WJ, Liu Y, Zhou H, Yin A, Li Z, Huang Y, Duan X (2013) Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat Nanotechnol 8:952–958CrossRef
go back to reference Zhang W, Chu C-P, Huang J-K, Chen C-H, Tsai M-L, Chang Y-H, Liang C-T, Chen Y-Z, Chueh Y-L, He J-H, Chou M-Y, Li L-J (2014) Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures. Sci Reports 4:3826 Zhang W, Chu C-P, Huang J-K, Chen C-H, Tsai M-L, Chang Y-H, Liang C-T, Chen Y-Z, Chueh Y-L, He J-H, Chou M-Y, Li L-J (2014) Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures. Sci Reports 4:3826
go back to reference Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang DW, Zhou P, Xiu F (2015a) Tunable charge-trap memory based on few-layer MoS2. ACS Nano 9:612–619CrossRef Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang DW, Zhou P, Xiu F (2015a) Tunable charge-trap memory based on few-layer MoS2. ACS Nano 9:612–619CrossRef
go back to reference Zhang H, Ma Y, Wan Y, Rong X, Xie Z, Wang W, Dai L (2015b) Measuring the refractive index of highly crystalline monolayer MoS2 with high confidence. Sci Reports 5:8440CrossRef Zhang H, Ma Y, Wan Y, Rong X, Xie Z, Wang W, Dai L (2015b) Measuring the refractive index of highly crystalline monolayer MoS2 with high confidence. Sci Reports 5:8440CrossRef
Metadata
Title
Electronic Devices Based on Atomically Thin Materials
Authors
Mircea Dragoman
Daniela Dragoman
Copyright Year
2017
DOI
https://doi.org/10.1007/978-3-319-48437-2_3