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Semiconductors
Published in: Semiconductors 11/2016

01-11-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Authors: D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorohodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko

Published in: Semiconductors | Issue 11/2016

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Metadata
Title
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Authors
D. N. Lobanov
A. V. Novikov
P. A. Yunin
E. V. Skorohodov
M. V. Shaleev
M. N. Drozdov
O. I. Khrykin
O. A. Buzanov
V. V. Alenkov
P. I. Folomin
A. B. Gritsenko
Publication date
01-11-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616110166

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