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2020 | OriginalPaper | Chapter

4. Epitaxial of III-Nitride LED Materials

Authors : Jinmin Li, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, Bin Xue

Published in: III-Nitrides Light Emitting Diodes: Technology and Applications

Publisher: Springer Singapore

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Abstract

III-nitrides include GaN, InN, AlN and their ternary and quaternary solid solutions. Since they are all direct band gap semiconductors, they are particularly suitable for fabricating light-emitting devices. However, the bulk single crystal growth conditions of the nitride material are complicated and require high temperature and high pressure. The current nitride material is mainly prepared by heteroepitaxial on other substrates.

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previous chapter Properties and Testing of Group III-Nitride LED Materials
next chapter InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs
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Metadata
Title
Epitaxial of III-Nitride LED Materials
Authors
Jinmin Li
Junxi Wang
Xiaoyan Yi
Zhiqiang Liu
Tongbo Wei
Jianchang Yan
Bin Xue
Copyright Year
2020
Publisher
Springer Singapore
Book
III-Nitrides Light Emitting Diodes: Technology and Applications

Print ISBN: 978-981-15-7948-6

Electronic ISBN: 978-981-15-7949-3

Copyright Year: 2020

DOI
https://doi.org/10.1007/978-981-15-7949-3_4

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