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01-10-2019 | PHYSICS OF NANOSTRUCTURES

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

Authors: R. V. Levin, B. V. Pushnyi, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskii, N. L. Bazhenov, K. D. Mynbaev, N. V. Pavlov, G. G. Zegrya

Published in: Technical Physics | Issue 10/2019

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Abstract

The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 μm at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.

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Title: Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers
Authors: R. V. Levin
B. V. Pushnyi
I. V. Fedorov
A. A. Usikova
V. N. Nevedomskii
N. L. Bazhenov
K. D. Mynbaev
N. V. Pavlov
G. G. Zegrya
Publication date: 01-10-2019
Publisher: Pleiades Publishing
Published in: Technical Physics / Issue 10/2019
Print ISSN: 1063-7842
Electronic ISSN: 1090-6525
DOI: https://doi.org/10.1134/S106378421910013X

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