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Semiconductors
Published in: Semiconductors 8/2010

01-08-2010 | Electrical and Optical Properties of Semiconductors

Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide

Authors: N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, R. A. Castro

Published in: Semiconductors | Issue 8/2010

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previous article Statistical method of deep-level transient spectroscopy in semiconductors
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Metadata
Title
Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
Authors
N. I. Anisimova
V. A. Bordovsky
G. I. Grabko
R. A. Castro
Publication date
01-08-2010
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 8/2010
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782610080075

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