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Semiconductors
Published in: Semiconductors 13/2018

01-12-2018 | ELECTRONIC PROPERTIES OF SEMICONDUCTORS

Features of the Electron Mobility in the n-InSe Layered Semiconductor

Authors: A. Sh. Abdinov, R. F. Babayeva

Published in: Semiconductors | Issue 13/2018

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Abstract

The dependences of the Hall electron mobility of n-InSe single crystals grown by the Bridgman method on a sample’s technological history, temperature, electric field, doping, and illumination are experimentally investigated. It is established that at temperatures below room temperature, the dependences of the electron mobility on external factors, initial resistivity, and doping are anomalous, i.e., do not obey the theory of free carrier mobility in quasi-ordered crystalline semiconductors. The observed anomalies are attributed to partial disordering and fluctuation of the potential of free energy bands of the n-InSe single crystals and can be controlled by temperature, electric field, doping, and illumination.
previous article Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
next article Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method

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Literature
1.
Z. S. Medvedeva, Chalcogenides of Elements of Subgroups IIIB of the Periodic System (Nauka, Moscow, 1968) [in Russian].
2.
3.
G. A. Il’chuk, V. V. Kus’nezh, R. Yu. Petrus’, V. Yu. Rud’, Yu. V. Rud’, and V. O. Ukrainets, Semiconductors 41, 1170 (2007).ADSCrossRef
4.
5.
D. Erronea, D. Martinez-Garcia, J. Ruiz-Fuertes, et al., Semicond. Phys. Quant. Electron. Optoelectron. 4, 360 (2004).
6.
S. R. Tamalampudi, Y. Y. Lu, U. R. Kumar, R. Sankar, C. D. Liao, B. K. Moorthy, C. H. Cheng, F. C. Chou, and Y. T. Chen, Nano Lett. 14, 2800 (2014).ADSCrossRef
7.
8.
J. Lauth, F. E. S. Gorris, M. S. Khoshkhoo, T. Ghasse, W. Friedrich, V. Lebedeva, A. Meyer, C. Klinke, A. Komowsld, and M. Scheele, Chem. Mater. 28, 1728 (2016).CrossRef
9.
S. D. Lei, F. F. Wen, L. H. Ge, S. Najmaei, A. George, Y. J. Gong, W. L. Gao, Z. H. Jin, B. Li, and J. Lou, Nano Lett. 15, 3048 (2015).ADSCrossRef
10.
11.
S. Sucharitakul, N. J. Goble, U. R. Kumar, R. Sankar, Z. A. Bogorad, F. C. Chou, Y. T. Chen, and X. P. A. Gao, Nano Lett. 15, 3815 (2015).ADSCrossRef
12.
D. A. Bandurin, A. V. Tyurnina, G. L. Yu, A. Mishchenko, V. Zolyomi, S. V. Morozov, R. K. Kumar, R. V. Gorbachev, Z. R. Kudrynskyi, S. Pezzini, Z. D. Kovalyuk, U. Zeitler, K. S. Novoselov, A. Patane, L. Eaves, I. V. Grigorieva, V. I. Fal’ko, A. K. Geim, and Y. Cao, Nat. Nanotechnol. 12, 223 (2017).ADSCrossRef
13.
14.
15.
S. N. Mustafaeva, A. A. Ismailov, and M. M. Asadov, J. Low Temp. Phys. 36, 310 (2010).CrossRef
16.
V. M. Kaminskii, Z. D. Kovalyuk, A. V. Zaslonkin, and V. I. Ivanov, Inorg. Mater. 48, 103 (2012).CrossRef
17.
M. Yu. Gusev, A. I. Dmitriev, A. N. Zyuganov, Z. D. Kovalyuk, V. I. Lazorenko, G. V. Lashkarev, and P. S. Smertenko, Sov. Phys. Semicond. 24, 885 (1990).
18.
G. B. Abdullaev, S. M. Atakishiev, and G. A. Akhundov, Some Problems of Experimental and Theoretical Physics (Elm, Baku, 1967) [in Russian].
19.
N. A. Ragimova, S. Z. Dzhafarova, and G. I. Abutalybov, Sov. Tech. Phys. Lett. 17, 81 (1991).
20.
R. M. Rzayev, Azerb. J. Phys. 18 (3), 16 (2011).
21.
22.
Z. A. Iskenderzade, O. M. Sadykhov, and A. Sh. Abdinov, Phys. Status Solidi A 92, 77 (1985).ADSCrossRef
23.
A. Sh. Abdinov and R. F. Babaeva, Neorg. Mater. 31, 1020 (1995).
24.
A. Sh. Abdinov, R. F. Babaeva, A. T. Bagirova, and R. M. Rzaev, Inorg. Mater. 42, 937 (2006).CrossRef
25.
A. Sh. Abdinov, A. M. Guseinov, Yu. G. Nurullayev, and O. M. Sadykhov, Phys. Status Solidi A 116, k173 (1989).ADSCrossRef
26.
N. Hannay, Solid-State Chemistry (Prentice-Hall, Englewood Cliffs, NJ, 1967).
27.
Ya. A. Ugai, General and Inorganic Chemistry (Vyssh. Shkola, Moscow, 1997) [in Russian].
28.
A. I. Artemenko, V. A. Malevannyi, and I. V. Tikunova, Handbook on Chemistry (Vyssh. Shkola, Moscow, 1990) [in Russian].
29.
R. F. Mekhtiev, E. O. Osmanov, and Yu. V. Rud’, Prib. Tekh. Eksp. 2, 179 (1964).
30.
A. M. Guseinov and T. I. Sadykhov, in Electrophysical Properties of Semiconductors and Gas Discharge Plasma, Collection of Articles (AGU, Baku, 1989), p. 42 [in Russian].
31.
State Diagrams of Binary Metallic Systems (Mashinostroenie, Moscow,1966) [in Russian].
32.
M. Hansen and K. Anderko, Structure of Binary Alloys (McGraw-Hill, New York, 1958).
33.
Physicochemical Properties of Semiconductor Substances, The Handbook (Nauka, Moscow, 1979) [in Russian].
34.
A. Likforman, D. Carre, Y. Etiune, and B. Bachet, Acta Crystallogr. 31, 1252 (1975).CrossRef
35.
K. C. Nadpol and S. Z. Ali, Indian J. Pure: Appl. Phys. 14, 434 (1976).
36.
T. Ohta, A. Klust, Y. A. Adams, Q. Yu, M. A. Olmstead, and F. S. Ohuchi, Phys. Rev. B 69, 125322 (2004).ADSCrossRef
37.
A. Sh. Abdinov, Ya. G. Gasanov, and F. I. Mamedov, Sov. Phys. Semicond. 16, 638 (1982).
38.
A. Sh. Abdinov, Ya. G. Akperov, V. K. Mamedov, and El’. Yu. Salaev, Sov. Phys. Semicond. 15, 66 (1981).
39.
N. B. Brandt, Z. D. Kovalyuk, and V. A. Kul’bachinskii, Sov. Phys. Semicond. 22, 1046 (1988).
40.
R. Smith, Semiconductors (Cambridge Univ. Press, Cambridge, 1978; Mir, Moscow, 1991).
41.
G. A. Akhundov, A. Sh. Abdinov, N. M. Mekhtiev, and A. G. Kyazym-zade, Sov. Phys. Semicond. 8, 124 (1974).
42.
A. Sh. Abdinov and A. G. Kyazym-zade, Sov. Phys. Semicond. 10, 47 (1976).
43.
A. Ya. Shik, Zh. Eksp. Teor. Fiz. 15, 408 (1972).
44.
M. K. Sheinkman and A. Ya. Shik, Sov. Phys. Semicond. 10, 128 (1976).
45.
E. D. Golovkina, N. N. Levchenya, and A. Ya. Shik, Sov. Phys. Semicond. 10, 229 (1976).
46.
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, New York, 1984; Moscow, Nauka, 1979).
Metadata
Title
Features of the Electron Mobility in the n-InSe Layered Semiconductor
Authors
A. Sh. Abdinov
R. F. Babayeva
Publication date
01-12-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 13/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261813002X

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