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Semiconductors
Published in: Semiconductors 11/2007

01-11-2007 | Electronic and Optical Properties of Semiconductors

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

Authors: N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Published in: Semiconductors | Issue 11/2007

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previous article Cathodoluminescence from dilute GaN x As1−x solutions (x ≤ 0.03)
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Metadata
Title
Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level
Authors
N. A. Poklonski
S. A. Vyrko
A. G. Zabrodskii
Publication date
01-11-2007
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 11/2007
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782607110048

Other articles of this Issue 11/2007

Semiconductors 11/2007 Go to the issue

Low-Dimensional Systems

Excition states in semiconductor quantum dots in the modified effective mass approximation

Review

Mechanisms of current flow in metal-semiconductor ohmic contacts

Electronic and Optical Properties of Semiconductors

Cathodoluminescence from dilute GaN x As1−x solutions (x ≤ 0.03)

Low-Dimensional Systems

Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites

Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions

Electronic and Optical Properties of Semiconductors

Large-magnitude spin polarization of electrons in an InAs-based diode structure

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