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Semiconductors
Published in: Semiconductors 1/2004

01-01-2004 | Semiconductor Structures, Interfaces, and Surfaces

Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In

Authors: V. Kazlauskienė, V. Kažukauskas, J. Miškinis, A. Petravičius, R. Pūras, S. Sakalauskas, J. Sinius, J. -V. Vaitkus, A. Žindulis

Published in: Semiconductors | Issue 1/2004

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previous article Donor compensation in the depletion layer of CdF2 crystals with a Schottky barrier
next article The investigation of structural perfection of CdxHg1−x Te/CdZnTe epitaxial layers by the Raman scattering method

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Metadata
Title
Formation of ohmic contacts on semi-insulating GaAs by laser deposition of In
Authors
V. Kazlauskienė
V. Kažukauskas
J. Miškinis
A. Petravičius
R. Pūras
S. Sakalauskas
J. Sinius
J. -V. Vaitkus
A. Žindulis
Publication date
01-01-2004
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2004
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.1641137

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Semiconductors 1/2004 Go to the issue

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Diffusion of zinc into InP with an unprotected surface

Semiconductor Structures, Interfaces, and Surfaces

The investigation of structural perfection of CdxHg1−x Te/CdZnTe epitaxial layers by the Raman scattering method

Electronic and Optical Properties of Semiconductors

Green luminescence band of zinc oxide films copper-doped by thermal diffusion

Electronic and Optical Properties of Semiconductors

Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr)

Atomic Structure and Nonelectronic Properties of Semiconductors

The evolution of surface structures in p-CdTe crystals under pulsed laser irradiation

Electronic and Optical Properties of Semiconductors

Effect of hydrogen on the electronic structure and properties of boron nitrides

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