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Semiconductors
Published in: Semiconductors 9/2023

01-09-2023

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Authors: B. R. Semyagin, A. V. Kolesnikov, M. A. Putyato, V. V. Preobrazhenskii, T. B. Popova, V. I. Ushanov, V. V. Chaldyshev

Published in: Semiconductors | Issue 9/2023

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Abstract

by molecular-beam epitaxy we have grown epitaxial layers of GaAs1–xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.
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Literature
1.
V. V. Chaldyshev, S. V. Novikov. Isovalent impurity doping of direct-gap III–V semiconductor layers. In: Semiconductor Technology: Processing and Novel Fabrication Techniques, eds. M. Levinshtein and M. Shur (Wiley-Interscience, N.Y., USA, 1997).
2.
R. Kh. Akchurin, Yu. F. Biryulin, Le Din Cao, V. I. Fistul, V. V. Chaldyshev. Elektron. tekhn. Materialy, 11, 22 (1984) (in Russian).
3.
Yu. F. Biryulin, N. V. Ganina, V. V. Chaldyshev, Yu. V. Shmartsev. FTP, 19 (6), 1104 (1985) (in Russian).
4.
N. V. Ganina, V. B. Ufimtsev, V. I. Fistul. Pis’ma ZhTF, 8, 620 (1982) (in Russian).
5.
Yu. F. Biryulin, N. V. Ganina, V. V. Chaldyshev, Yu. V. Shmartsev. Pis’ma ZhTF, 12 (5), 274 (1986) (in Russian).
6.
Yu. F. Biryulin, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev. FTP, 21 (5), 949 (1987) (in Russian).
7.
Yu. F. Biryulin, V. V. Vorobieva, V. G. Golubev, L. V. Golubev, V. I. Ivanov-Omsky, S. V. Novikov, A. V. Osutin, I. G. Saveliev, V. V. Chaldyshev, Yu. V. Shmartsev, O. V. Yaroshevich. FTP, 21 (12), 2201 (1987) (in Russian).
8.
S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte. Appl. Phys. Lett., 82 (14), 2245 (2003).CrossRefADS
9.
S. Francoeur, M. -J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, T. Tiedje. Appl. Phys. Lett., 82 (22), 3874 (2003).CrossRefADS
10.
E. Tisbi, E. Placidi, R. Magri, P. Prosposito, R. Francini, A. Zaganelli, S. Cecchi, E. Zallo, R. Calarco, E. Luna, J. Honolka, M. Vondracek, S. Colonna, F. Arciprete. Phys. Rev. Appl., 14 (1), 014028 (2020).CrossRefADS
11.
Yuchen Liu, Xin Yi, N. J. Bailey, Zhize Zhou, T. B. O. Rockett, Leh W. Lim, Chee H. Tan, R. D. Richards, J. P. R. David. Nature Commun., 12 (1), 4784 (2021).CrossRefADS
12.
K. Bertulis, A. Krotkus, G. Aleksejenko, V. Pacebutas, R. Adomavicius, G. Molis, S. Marcinkevicius. Appl. Phys. Lett., 88 (20), 201112 (2006).CrossRefADS
13.
Sonia Blel, C. Bilel. J. Electron. Mater., 50 (6), 3380 (2021).ADS
14.
S. T. Schaefer, M. S. Milosavljevic, R. R. Kosireddy, S. R. Johnson. J. Appl. Phys., 129 (3), 035303 (2021).CrossRefADS
15.
Y. Guan, G. Luo, D. Morgan, S. E. Babcock, T. F. Kuech. J. Phys. Chem. Solids, 138, 109245 (2020).CrossRef
16.
M. A. Stevens, K. A. Grossklaus, T. E. Vandervelde. J. Cryst. Growth, 527, 125216 (2019).CrossRef
17.
C. Cornille, A. Arnoult, Q. Gravelier, C. Fontaine. J. Appl. Phys., 126 (9), 093106 (2019).CrossRefADS
18.
M. A. Stevens, K. A. Grossklaus, J. H. McElearney, T. E. Vandervelde. J. Electron. Mater., 48 (5), 3376 (2019).CrossRefADS
19.
20.
21.
22.
L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev. Crystallography Reports, 47, S118 (2002).CrossRefADS
23.
24.
M. R. Melloch, J. M. Woodall, E. S. Harmon, N. Otsuka, F. H. Pollak, D. D. Nolte, R. M. Feenstra, M. A. Lutz. Annual Rev. Mater. Sci., 25, 547 (1995).CrossRefADS
25.
A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David. Phys. Status Solidi C, 9 (2), 259 (2012).CrossRefADS
Metadata
Title
Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy
Authors
B. R. Semyagin
A. V. Kolesnikov
M. A. Putyato
V. V. Preobrazhenskii
T. B. Popova
V. I. Ushanov
V. V. Chaldyshev
Publication date
01-09-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 9/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623060155

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