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Semiconductors
Published in: Semiconductors 1/2008

01-01-2008 | Physics of Semiconductor Devices

High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions

Authors: E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova, A. V. Sadokhin, A. Yu. Azarov, V. G. Kossov, R. R. Yafaev

Published in: Semiconductors | Issue 1/2008

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Metadata
Title
High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions
Authors
E. V. Kalinina
N. B. Strokan
A. M. Ivanov
A. A. Sitnikova
A. V. Sadokhin
A. Yu. Azarov
V. G. Kossov
R. R. Yafaev
Publication date
01-01-2008
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 1/2008
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782608010120

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