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The International Journal of Advanced Manufacturing Technology
Published in: The International Journal of Advanced Manufacturing Technology 7-8/2020

03-01-2020 | ORIGINAL ARTICLE

Hybrid CO2 laser-polishing process for improving material removal of silicon carbide

Authors: Mincheol Kim, Sangmin Bang, Dong-Hyeon Kim, Hyun-Taek Lee, Geon-Hee Kim, Sung-Hoon Ahn

Published in: The International Journal of Advanced Manufacturing Technology | Issue 7-8/2020

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Abstract

A novel hybrid polishing process, called laser-assisted polishing (LAP), was proposed in this study for improving the material removal rate (MRR) of polishing silicon carbide (SiC) by combining a CO2 laser source and a conventional polishing machine. The results showed that the MRR increased by 79.0% using the LAP process on the cracked and oxidized SiC sample surface as compared to that using the mechanical polishing of a normal sample. It was also found that the laser-induced crack was the main mechanism underlying the growth of MRR in the LAP process. It was expected that the proposed LAP process and the material removal mechanism might shed light on the expansion of the hybrid machining field and better industrial application of SiC.
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Metadata
Title
Hybrid CO2 laser-polishing process for improving material removal of silicon carbide
Authors
Mincheol Kim
Sangmin Bang
Dong-Hyeon Kim
Hyun-Taek Lee
Geon-Hee Kim
Sung-Hoon Ahn
Publication date
03-01-2020
Publisher
Springer London
Published in
The International Journal of Advanced Manufacturing Technology / Issue 7-8/2020
Print ISSN: 0268-3768
Electronic ISSN: 1433-3015
DOI
https://doi.org/10.1007/s00170-019-04846-0

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