2006 | OriginalPaper | Chapter
Hydrodynamic Modeling of an Ultra-Thin Base Silicon Bipolar Transistor
Author : O. Muscato
Published in: Progress in Industrial Mathematics at ECMI 2004
Publisher: Springer Berlin Heidelberg
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Transport phenomena in a submicron
npn
silicon bipolar junction transistor are described by using an extended hydrodynamic model for the electrons, combined with a solution of the drift-diffusion model for the holes. Under suitable scaling assumptions, the above model reduces to the energy transport model, or to the Navier-Stokes-Fourier model, in which all the transport coefficients are now explicitly determined. The validity of the constitutive equations is investigated by using Monte Carlo simulations.