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Perspectives on Electronic and Optoelectronic Materials Read chapter Read first chapter

2007 | OriginalPaper | Chapter

36. II–VI Narrow-Bandgap Semiconductors for Optoelectronics

Author : Ian Baker, Dr.

Published in: Springer Handbook of Electronic and Photonic Materials

Publisher: Springer US

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Abstract

The field of narrow-gap II–VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1–x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1–x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1–x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II–VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1–x Mn x Te and Hg1–x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

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previous chapter Doping Aspects of Zn-Based Wide-Band-Gap Semiconductors
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Metadata
Title
II–VI Narrow-Bandgap Semiconductors for Optoelectronics
Author
Ian Baker, Dr.
Copyright Year
2007
Publisher
Springer US
Book
Springer Handbook of Electronic and Photonic Materials

Print ISBN: 978-0-387-26059-4

Electronic ISBN: 978-0-387-29185-7

Copyright Year: 2007

DOI
https://doi.org/10.1007/978-0-387-29185-7_36