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Semiconductors
Published in: Semiconductors 12/2015

01-12-2015 | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015

Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures

Authors: D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, V. S. Varavin, N. N. Mikhailov, S. A. Dvorestky, V. I. Gavrilenko, F. Teppe

Published in: Semiconductors | Issue 12/2015

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previous article CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures
next article Investigation of magnetoabsorption at different temperatures in HgTe/CdHgTe quantum-well heterostructures in pulsed magnetic fields

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Metadata
Title
Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures
Authors
D. V. Kozlov
V. V. Rumyantsev
S. V. Morozov
A. M. Kadykov
V. S. Varavin
N. N. Mikhailov
S. A. Dvorestky
V. I. Gavrilenko
F. Teppe
Publication date
01-12-2015
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2015
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782615120106

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