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Semiconductors
Published in: Semiconductors 9/2005

01-09-2005 | Low-Dimensional Systems

Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers

Authors: A. M. Emel’yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, E. O. Parshin

Published in: Semiconductors | Issue 9/2005

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Metadata
Title
Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers
Authors
A. M. Emel’yanov
N. A. Sobolev
E. I. Shek
V. V. Lundin
A. S. Usikov
E. O. Parshin
Publication date
01-09-2005
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 9/2005
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/1.2042596

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