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Semiconductors
Published in: Semiconductors 11/2017

01-11-2017 | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017

Inhomogeneous dopant distribution in III–V nanowires

Authors: E. D. Leshchenko, V. G. Dubrovskii

Published in: Semiconductors | Issue 11/2017

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previous article Contactless characterization of manganese and carbon delta-layers in gallium arsenide
next article Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

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Metadata
Title
Inhomogeneous dopant distribution in III–V nanowires
Authors
E. D. Leshchenko
V. G. Dubrovskii
Publication date
01-11-2017
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2017
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782617110173

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Contactless characterization of manganese and carbon delta-layers in gallium arsenide

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Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator

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