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2010 | OriginalPaper | Chapter

1. Introduction

Author : B. Jayant Baliga

Published in: Advanced Power MOSFET Concepts

Publisher: Springer US

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Abstract

Power devices are required for applications that operate over a broad spectrum of power levels as shown in Fig. 1.1 [1]. Based up on this figure, the applications can be broken down into several categories. The first category is applications that require low operating current (typically less than 1 A) levels. These applications, such as display drives, usually require a large number of transistors that must be capable of blocking up to 300 V. The small size of the low-current transistors allows their integration on a single chip with control circuits to provide a cost-effective solution.

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Literature
1.
go back to reference B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer Science, New York, 2008.CrossRef B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer Science, New York, 2008.CrossRef
2.
go back to reference B.J. Baliga, “Silicon Carbide Power Devices”, World Scientific Press, Singapore, 2005. B.J. Baliga, “Silicon Carbide Power Devices”, World Scientific Press, Singapore, 2005.
3.
go back to reference B.J. Baliga, “Silicon RF Power Devices”, World Scientific Press, Singapore, 2005.CrossRef B.J. Baliga, “Silicon RF Power Devices”, World Scientific Press, Singapore, 2005.CrossRef
4.
go back to reference B.J. Baliga, “Modern Power Devices”, Wiley, New York, 1987. B.J. Baliga, “Modern Power Devices”, Wiley, New York, 1987.
5.
go back to reference B.J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982.CrossRef B.J. Baliga, “Semiconductors for High Voltage Vertical Channel Field Effect Transistors”, Journal of Applied Physics, Vol. 53, pp. 1759–1764, 1982.CrossRef
6.
go back to reference B.J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985.CrossRef B.J. Baliga, et al, “Gallium Arsenide Schottky Power Rectifiers”, IEEE Transactions on Electron Devices, Vol. ED-32, pp. 1130–1134, 1985.CrossRef
7.
go back to reference M. Bhatnagar, P.M. McLarty, and B.J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992.CrossRef M. Bhatnagar, P.M. McLarty, and B.J. Baliga, “Silicon Carbide High Voltage (400 V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol. EDL-13, pp. 501–503, 1992.CrossRef
8.
go back to reference W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967.CrossRef W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967.CrossRef
9.
go back to reference R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol. 13, pp. 583–608, 1970.CrossRef R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol. 13, pp. 583–608, 1970.CrossRef
10.
go back to reference N. Mohan, T.M. Undeland, and W.P. Robbins, “Power Electronics”, pp. 164–172, Wiley, New York, 1995. N. Mohan, T.M. Undeland, and W.P. Robbins, “Power Electronics”, pp. 164–172, Wiley, New York, 1995.
11.
go back to reference J.D. van Wyk, “Power Electronic Converters for Drives”, pp. 81–137, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, New Jersey, 1997. J.D. van Wyk, “Power Electronic Converters for Drives”, pp. 81–137, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, New Jersey, 1997.
12.
go back to reference J. Holtz, “Pulse Width Modulation for Electronic Power Conversion”, pp. 138–208, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, 1997. J. Holtz, “Pulse Width Modulation for Electronic Power Conversion”, pp. 138–208, in ‘Power Electronics and Variable Frequency Drives’, Edited by B.K. Bose, IEEE Press, 1997.
13.
go back to reference B.J. Baliga, “Advanced Power Rectifier Concepts”, Springer-Science, New York, 2009.CrossRef B.J. Baliga, “Advanced Power Rectifier Concepts”, Springer-Science, New York, 2009.CrossRef
Metadata
Title
Introduction
Author
B. Jayant Baliga
Copyright Year
2010
Publisher
Springer US
DOI
https://doi.org/10.1007/978-1-4419-5917-1_1