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2021 | OriginalPaper | Chapter

1. Introduction

Author : Daniel Montero Álvarez

Published in: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Publisher: Springer International Publishing

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Abstract

Think about any day in your life. How many of our possessions contain, at least, one microchip that are made of semiconductors? Semiconductors are the enablers of our modern society, being silicon the most important of them. There are many things that can be done with Si chips. Unfortunately, detecting infrared rays, at least at room temperature, is not one of them. In this chapter, we explore the current infrared sensing technology and their limitations. Then, we introduce the concept of supersaturated materials, and how it could be a potential solution for getting faster, cheaper, and more environmentally friendly infrared detectors, based on Si, and operating at room-temperature.

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Literature
1.
Grundmann M (2021) The physics of semiconductors. Springer International Publishing. ISBN: 978-3-030-51568-3
2.
Neamen D (2003) Semiconductor physics and devices. McGraw-Hill. ISBN: 978-0-072-32107-4
3.
Sze SM, Kwok KNg (2007) Physics of semiconductors devices, 3rd edn. Wiley. ISBN: 978-0-471-14323-9
4.
Hook JR, Hall HE (1991) Solid state physics, 2nd edn. Wiley. ISBN: 978-0-471-92805-8
5.
Ashcroft NW, Mermin ND (1976) Solid state physics. Brooks Cole. ISBN: 978-0-030-83993-1
6.
Busch G (1989) Early history of the physics and chemistry of semiconductors-from doubts to fact in a hundred years. Eur J Phys 10:254–264. Doi:10.1088/0143-0807/10/4/002
7.
Emsley J (2003) Book review: nature’s building blocks: an A–Z guide to the elements. Oxford University Press, Oxford
8.
Neamen DA (1997) Semiconductor physics and devices, vol 3. McGraw-Hill, New York
9.
Wolf S (2003) Microchip manufacturing. Lattice Press, pp 584
10.
Friedrich J (2016) Methods for bulk growth of inorganic crystals: crystal growth. Reference Module in Materials Science and Materials Engineering, Elsevier
11.
12.
13.
Radziemska E (2003) Thermal performance of Si and GaAs based solar cells and modules: a review. Prog Energy Combust Sci 29:407–424. Doi:10.1016/s0360-1285(03)00032-7
14.
Rogalski A (2012) History of infrared detectors. Opto-Electron Rev 20: 279–308
15.
Hulstrom R, Bird R, Riordan C (1985) Spectral solar irradiance data sets for selected terrestrial conditions. Sol Cells 15:365–391
16.
Miller JL (1994) Principles of infrared technolog: a practical guide to the state of the art. Springer 1: 523
17.
Miller JL, Friedman EJ (2003) Photonics rules of thumb, 2nd edn. Spie Press Book
18.
19.
Vatsia ML et al. (1972) Night-sky radiant sterance from 450 to 2000 nanometres. Army Electronics Command. Fort Monmouth, NJ. AD-750 609, 42
20.
Voshell A, Dhar N, Rana MM (2017) Materials for microbolometers: vanadium oxide or silicon derivatives. Proceedings volume 10209, image sensing technologies: materials, devices, systems, and applications IV; 102090 M SPIE
21.
Kadlec EA (2011) Thermal detecting in the long wafe infrared and very long wave infrared regions. PhD dissertation, 67
22.
23.
Rogalski A (2002) Infrared detectors: an overview. Infrared Phys Techn 43:187–210
24.
25.
26.
27.
Ngo HT, Tao L, Zhang M, Livingston A, Asari VK (2005) A visibility improvement system for low vision drivers by nonlinear enhancement of fused visible and infrared video. IEEE Computer Society Conference on Computer Vision and Pattern Recognition
28.
Haas H, Yin L, Wang Y, Chen C (2016) What is LiFi? J Light Technol 34:1533–1544
29.
30.
Alkholidi AG et al. (2014) Free space optical communication—theory and practices. IntechOpen 55
31.
32.
Dhariwal SR, Ojha VN (1982) Band-gap narrowing in heavily doped silicon. Solid State Electron 25:909–911
33.
Lowney JR (1985) Band-gap narrowing in the space-charge region of heavily doped silicon diodes. Solid State Electron 28:187–191
34.
Mnatsakanov T., Pomortseva LI, Yakovlev DG (1994) Estimate of the effective narrowing of the band-gap in heavily-doped layers of silicon structures. Semicond 28:1059–1061
35.
Matsubara T, Toyozawa Y (1961) Theory of impurity band conduction in semiconductors. Prog Theor Phys 26:739–756
36.
Mott NF, Twose WD (1961) The theory of impurity conduction. Adv Phys 10:107–163
37.
Klaassen DBM, Slotboom JW, de Graaff HC (1992) Unified apparent bandgap narrowing in n- and p-type silicon. Solid-State Electronics 35(2)
38.
Jones SW (2008) Diffusion in silicon. IC Knowledge, LLC
39.
Shalimova KV (1985) Physics of semiconductors. Energoatomizdat, Moscow
40.
Mott NF (1968) Metal-insulator transition. Rev Mod Phys 40(7)
41.
Belitz D, Kirkpatrick TR (1994) The Anderson-Mott transition. Rev Mod Phys 66:261–380
42.
Luque A, Marti A (1997) Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Phys Rev Lett 78:5014–5017
43.
Olea J et al. (2010) High quality Ti-implanted Si layers above the Mott limit. J Appl Phys 107
44.
Schibli E, Milnes AG (1967) Deep impurities in silicon. Mater Sci Eng 2:173–180
45.
Mott NF (1949) The basis of the electron theory of metals, with special reference to the transition metals. Proc Phys Soc A 62(7)
46.
Newman BK, Sher M-J, Mazur E, Buonassisi T (2011) Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon. App Phys Let 98:251905
47.
Casalino M, Coppola G, Iodice et al. (2010) Near-Infrared sub-Bandgap all-silicon photodetectors: state of the art and perspectives. Sensors 10:10571–10600
48.
Olea J (2009) Procesos de implantación iónica para semiconductores de banda intermedia. Thesis dissertation
49.
Gonzalez-Diaz G et al. (2009) Intermediate band mobility in heavily titanium-doped silicon layers. Sol Energ Mat Sol C 93:1668–1673
50.
Olea J, Gonzalez-Diaz G, Pastor D, Martil I (2009) Electronic transport properties of ti-impurity band in Si. J Phys D Appl Phys 42
51.
Olea J et al. (2009) High quality Ti-implanted Si layers above solid solubility limit. Proceedings of the 2009 Spanish conference on electron devices, pp 38–41
52.
Olea J, Pastor D, Martil I, Gonzalez-Diaz G (2010) Thermal stability of intermediate band behavior in Ti implanted Si. Sol Energ Mat Sol C 94:1907–1911
53.
Pastor D et al. (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semicond Sci Tech 26
54.
Olea J, Pastor D, Toledano-Luque M, Martil I, Gonzalez-Diaz G (2011) Depth profile study of Ti implanted Si at very high doses. J Appl Phys 110
55.
Olea J, del Prado A, Pastor D, Martil I, Gonzalez-Diaz G (2011) Sub-bandgap absorption in Ti implanted Si over the Mott limit. J Appl Phys 109
56.
Olea J et al. (2011) Two-layer hall effect model for intermediate band Ti-implanted silicon. J Appl Phys 109
57.
Pastor D et al. (2012) Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon. Sol Energ Mat Sol C 104:159–164
58.
Olea J et al. (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films 520:6614–6618
59.
Mathiot D, Hocine S (1989) Titanium-related deep levels in silicon—a reexamination. J Appl Phys 66:5862–5867
60.
Hocine SAMD (1988) Titanium diffusion in silicon. Appl Phys Lett 53:3
61.
Ertekin E et al. (2012) Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin. Phys Rev Lett 108
62.
Mailoa JP et al. (2014) Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nat Commun 5
63.
Franta B et al. (2015) Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing. J Appl Phys 118
64.
Yang W et al. (2017) Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si. Phy Rev Mater 1
65.
Liu F et al. (2017) Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing. J Phys D Appl Phys 50
66.
Liu F et al. (2018) On the insulator-to-metal transition in titanium-implanted silicon. Sci Rep-Uk 8
67.
Jones RC (1957) Quantum efficiency of photoconductors. Proc. IRIS 2
68.
Jones RC (1960) Proposal of the detectivity D* for detectors limited by radiation noise. J Opt Soc Am 50:1058–1059
69.
70.
71.
Graf RF (1999) Modern dictionary of electronics 7th edition, p 869. Newnes Elsevier
72.
Janesick JR (2001) Scientific charge-coupled devices. Spie Press Book 1:920
73.
74.
Fowler BLX, Vu P (2006) CMOS image sensors—past present and future. Society for imaging science and technology ICIS ‘06 international congress of imaging science, 8
75.
Theuwissen AJP (2008) CMOS image sensors: State-of-the-art. Solid State Electron 52:1401–1406
76.
77.
Garcia-Hemme E (2015) Respuesta infrarroja en silicio mediante implantación iónica de metales de transición. Thesis dissertation
Metadata
Title
Introduction
Author
Daniel Montero Álvarez
Copyright Year
2021
Book
Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Print ISBN: 978-3-030-63825-2

Electronic ISBN: 978-3-030-63826-9

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-3-030-63826-9_1