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Semiconductors
Published in: Semiconductors 2/2023

01-02-2023

Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots

Authors: A. V. Babichev, S. D. Komarov, Yu. S. Tkach, V. N. Nevedomskiy, S. A. Blokhin, N. V. Kryzhanovskaya, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov

Published in: Semiconductors | Issue 2/2023

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Abstract

The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular-beam epitaxy according to the Stransky–Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.
next article Electron States of Atoms in Monolayers Adsorbed on Silicon Carbide

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Metadata
Title
Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots
Authors
A. V. Babichev
S. D. Komarov
Yu. S. Tkach
V. N. Nevedomskiy
S. A. Blokhin
N. V. Kryzhanovskaya
A. G. Gladyshev
L. Ya. Karachinsky
I. I. Novikov
Publication date
01-02-2023
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 2/2023
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782623040012

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