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Optical and Quantum Electronics

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01-08-2019

Investigation the optical band gap of self-assembled monolayer of tin selenide synthesized by chemical solution deposition

Authors: Nader Ghobadi, Ebrahim Gholami Hatam

Published in: Optical and Quantum Electronics | Issue 8/2019

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Abstract

In this study, the fabrication and characterization of the thin layer of SnSe self-assembled were investigated by control of the preparation parameters. SnSe binary nanoparticles semiconductor were prepared using chemical solution deposition technique. The deposition time and temperature and the solution concentration that govern the evolution of the configuration films and optical band gap in chemical deposition processes was explored. We benefited from Rutherford Backscattering Spectrometry with 2 MeV ⁴He ions to determine the depth profile of the elements in tin selenide. UV–visible spectroscopy was used for energy band gap determination. Also, the nanostructured and the morphologies of the thin films were analyzed by scanning electron microscopy. We were able to achieve a broad optical band gap ranging from 5.82 to 3.06 eV of SnSe thin films appropriate for solar cell and photovoltaic applications.

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Title: Investigation the optical band gap of self-assembled monolayer of tin selenide synthesized by chemical solution deposition
Authors: Nader Ghobadi
Ebrahim Gholami Hatam
Publication date: 01-08-2019
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 8/2019
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-019-1984-8

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