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2018 | OriginalPaper | Chapter

3. Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Transistors

Authors : Iraj Sadegh Amiri, Mahdiar Ghadiry

Published in: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

Publisher: Springer Singapore

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Abstract

This chapter addresses the methodology used in this thesis, which is divided into three sections. Section 3.1 presents models for surface potential, lateral electric field and length of saturation velocity region (LVSR) of single- and double-gate GNRFETs. Section 3.2 proposes a model for ionization coefficient of GNR, and finally, Sect. 3.3 presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.

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previous chapter Basic Concept of Field-Effect Transistors

next chapter Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor

H. Wong, Drain breakdown in submicron MOSFETs: a review. Microelectron. Reliab. 40(1), 3–15 (2000)CrossRef

Q. Zhang, T. Fang, H. Xing, A. Seabaugh, D. Jena, Graphene nanoribbon tunnel transistors. Electron. Device Lett. IEEE 29(12), 1344–1346 (2008)CrossRef

M. Cheli, P. Michetti, G. Iannaccone, Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC. Electron. Devices IEEE Trans. 57(8), 1936–1941 (2010)CrossRef

G. Liang, N. Neophytou, M.S. Lundstrom, D.E. Nikonov, Computational study of double-gate graphene nano-ribbon transistors. J. Comput. Electron. 7(3), 394–397 (2008)CrossRef

T. Fang, A. Konar, H. Xing, D. Jena, Carrier statistics and quantum capacitance of graphene sheets and ribbons. Appl. Phys. Lett. 91(9), 092109 (2007)CrossRef

K.S. Novoselov, A.K. Geim, S. Morozov, D. Jiang, Y. Zhang, S.A. Dubonos, I. Grigorieva, A. Firsov, Electric field effect in atomically thin carbon films. Science 306(5696), 666–669 (2004)

M. El Banna, M. El Nokali, A pseudo-two-dimensional analysis of short channel MOSFETs. Solid-State Electron. 31(2), 269–274 (1988)CrossRef

D. Krizaj, G. Charitat, S. Amon, A new analytical model for determination of breakdown voltage of Resurf structures. Solid-State Electron. 39(9), 1353–1358 (1996)

M.A. Imam, M.A. Osman, A.A. Osman, Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects. Microelectron. Reliab. 39(4), 487–495 (1999)CrossRef

10.

P.G. Harper, D.L. Weaire, Introduction to Physical Mathematics: CUP Archive (1985)

11.

O. Rubel, A. Potvin, D. Laughton, Generalized lucky-drift model for impact ionization in semiconductors with disorder. J. Phys. Condens. Matter 23(5), 055802 (2011)CrossRef

12.

K. Yeom, J. Hinckley, J. Singh, Calculation of electron and hole impact ionization coefficients in SiGe alloys. J. Appl. Phys. 80(12), 6773–6782 (1996)CrossRef

13.

S. McKenzie, M. Burt, A test of the lucky-drift theory of the impact ionisation coefficient using Monte Carlo simulation. J. Phys. C Solid State Phys. 19(12), 1959 (1986)

14.

B. Ridley, Lucky-drift mechanism for impact ionisation in semiconductors. J. Phys. C Solid State Phys. 16(17), 3373 (1983)CrossRef

15.

J. Devreese, R. van Welzenis, R. Evrard, Impact ionisation probability in InSb. Appl. Phys. A 29(3), 125–132 (1982)CrossRef

16.

F. Schwierz, Graphene transistors. Nat. Nanotechnol. 5(7), 487–496 (2010)CrossRef

17.

W.-K. Tse, E. Hwang, S.D. Sarma, Ballistic hot electron transport in graphene. Appl. Phys. Lett. 93(2), 023128 (2008)CrossRef

18.

D. Berdebes, T. Low, M. Lundstrom, B.N. Center, Low Bias Transport in Graphene: An Introduction (2009)

19.

V.E. Dorgan, M.-H. Bae, E. Pop, Mobility and saturation velocity in graphene on SiO₂. arXiv preprint: arXiv:1005.2711 (2010)

20.

T. Fang, A. Konar, H. Xing, D. Jena, Mobility in semiconducting graphene nanoribbons: phonon, impurity, and edge roughness scattering. Phys. Rev. B 78(20), 205403 (2008)CrossRef

21.

R. Shishir, D. Ferry, Velocity saturation in intrinsic graphene. J. Phys. Condens. Matter 21(34), 344201 (2009)CrossRef

22.

W. Maes, K. De Meyer, R. Van Overstraeten, Impact ionization in silicon: a review and update. Solid-State Electron. 33(6), 705–718 (1990)CrossRef

Title: Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Transistors
Authors: Iraj Sadegh Amiri
Mahdiar Ghadiry
Publisher: Springer Singapore
Book: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Print ISBN: 978-981-10-6549-1

Electronic ISBN: 978-981-10-6550-7

Copyright Year: 2018
DOI: https://doi.org/10.1007/978-981-10-6550-7_3