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Optical and Quantum Electronics

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01-07-2013

Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers

Authors: Jeramy Dickerson, Konstantinos Pantzas, Tarik Moudakir, Abdallah Ougazzaden, Paul L. Voss

Published in: Optical and Quantum Electronics | Issue 7/2013

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Abstract

We report the numerical study of n-GaN/i-InGaN/p-GaN solar cells on Ga-face substrates with thin GaN interlayers present in the intrinsic InGaN region. These interlayers have recently been shown to significantly increase the crystal quality of thick InGaN layers \((>\!\!\!120\,\text{ nm})\). We find that tunneling is efficient in n-i-p structures having interlayers \(\le \! 1.5\,\text{ nm}\) thick if polarization charges are sufficiently screened. If left unscreened, the large polarization charges naturally formed at the heterointerfaces degrades n-i-p performance, at a given interlayer thickness, because polarization charges increase the distance that carriers must tunnel. Simulations identify favorable parameter ranges.

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Title: Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers
Authors: Jeramy Dickerson
Konstantinos Pantzas
Tarik Moudakir
Abdallah Ougazzaden
Paul L. Voss
Publication date: 01-07-2013
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 7/2013
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-013-9665-5

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