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Semiconductors
Published in: Semiconductors 11/2016

01-11-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

Authors: N. V. Baidus, V. A. Kukushkin, B. N. Zvonkov, S. M. Nekorkin

Published in: Semiconductors | Issue 11/2016

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previous article Investigation of the thermal stability of metastable GeSn epitaxial layers

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Metadata
Title
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
Authors
N. V. Baidus
V. A. Kukushkin
B. N. Zvonkov
S. M. Nekorkin
Publication date
01-11-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 11/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616110026

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XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

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XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

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XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

On the crystal structure and thermoelectric properties of thin Si1–x Mn x films

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