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Journal of Materials Science
Published in: Journal of Materials Science 16/2017

27-04-2017 | Chemical routes to materials

Near-infrared-emitting colloidal Ag2S quantum dots excited by an 808 nm diode laser

Authors: Yanyan Zhang, Jinfeng Xia, Caixia Li, Guohong Zhou, Wei Yang, Dandan Wang, Huiping Zheng, Yuansheng Du, Xi Li, Qiang Li

Published in: Journal of Materials Science | Issue 16/2017

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Abstract

Thioglycolic acid (TGA)-coated colloidal Ag2S quantum dots (QDs) emitting in the near-infrared (NIR) region upon excitation by an 808 nm diode laser were synthesized. The observed photoluminescence (PL) was attributed to the presence of ligand-modified Ag2S on the QD surfaces and could be easily controlled by a simple dilution process due to the concentration-dependent surface structure of the colloidal QDs. Upon dilution of the solution, the PL intensity initially increased before later decreasing, with a blueshift being observed in the PL spectra. These phenomena can be accounted for by the aggregation of QDs due to a decrease in the content of ligand-modified Ag2S on the QD surfaces upon dilution, which in turn affected the fluorescence resonance energy transfer (FRET), and re-emission of the surface energy level.
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Metadata
Title
Near-infrared-emitting colloidal Ag2S quantum dots excited by an 808 nm diode laser
Authors
Yanyan Zhang
Jinfeng Xia
Caixia Li
Guohong Zhou
Wei Yang
Dandan Wang
Huiping Zheng
Yuansheng Du
Xi Li
Qiang Li
Publication date
27-04-2017
Publisher
Springer US
Published in
Journal of Materials Science / Issue 16/2017
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-017-1131-5

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