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Published in:
01-08-2015
Numerical determination of concentration-dependent Auger recombination coefficient in \(\varvec{n}\)-InGaN alloys
Published in: Optical and Quantum Electronics | Issue 8/2015
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Abstract
Direct and phonon-assisted mechanisms of Auger recombination in bulk \(n\)-\(\hbox {In}_{\mathrm{x}}\hbox {Ga}_{1-\mathrm{x}}\hbox {N}\) wurtzite alloys are numerically investigated. The matrix elements of electron–electron and electron–phonon interaction are calculated using the band structure and wave functions obtained by the empirical pseudopotential method. Phonon-assisted Auger process is analyzed by the spectral density functions approach. The dependences of Auger recombination coefficient on the energy band gap of \(n\)-\(\hbox {In}_{\mathrm{x}}\hbox {Ga}_{1-\mathrm{x}}\hbox {N}\) alloys, temperature and carrier concentration are presented. The calculated Auger coefficients for alloys corresponding to the visible spectrum exhibit strong reduction at high carrier concentration.