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Optical and Quantum Electronics

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01-08-2020

Numerical simulation of In_xGa_1−xAs/InP PIN photodetector for optimum performance at 298 K

Authors: Sanjeev Tyagi, P. K. Saxena, Rishabh Kumar

Published in: Optical and Quantum Electronics | Issue 8/2020

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Abstract

In the present paper, a pin hetero-structure based on In_xGa_1−xAs/InP material system has been modeled. The rigorous study through design of experiments (DOE) has been run for achieving optimum device performance at room temperature. A generic model has been formulated to understand the physical mechanisms inside the device under the appropriate biasing conditions. The developed model has been compared with experimentally fabricated structure. Different material parameters have been tuned to calibrate the experimental reported results. The calibrated model has been applied to the specified device structure to extract the optimized results. The effect of passivation has been analyzed in detail to assess the interfacial impact on detector performance in terms of I-V characteristics. The dark current associated with the proposed pin device structure has been found to be ≥ 26 nA/cm² at 298 K with high quantum efficiency.

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Title: Numerical simulation of InxGa1−xAs/InP PIN photodetector for optimum performance at 298 K
Authors: Sanjeev Tyagi
P. K. Saxena
Rishabh Kumar
Publication date: 01-08-2020
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 8/2020
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-020-02488-1

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