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Published in:
2014 | OriginalPaper | Chapter
Observation of Low Mobility Electron in Vacancy Doped LPE Grown HgCdTe
Authors : Tapasya Jain, Rachna Manchanda, B. L. Sharma, O. P. Thakur, R. K. Sharma
Published in: Physics of Semiconductor Devices
Publisher: Springer International Publishing
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Variable magnetic field Hall and resistivity data at different temperatures for vacancy doped LPE grown Hg
0.71
Cd
0.29
Te samples have been analyzed using multicarrier fitting. Samples grown from Te-rich melts by Horizontal Slider techniques have been investigated. Measurements were carried out at temperatures from 20 to 300 K using magnetic fields in 0–8 Tesla range. In addition to heavy hole and light hole an electron with low mobility (77 K value of ~812 cm
2
V
−1
s
−1
) was observed at temperatures below 150 K. Its presence has been attributed to interface as confirmed by Hall measurements of the interfacial layer (~4 µm above CdZnTe substrate) and is reported here for HgCdTe for the first time.